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BLP15M7160PY

Description
RF FET LDMOS 65V 20DB SOT12232
Categorysemiconductor    Discrete semiconductor   
File Size818KB,11 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Environmental Compliance
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RF FET LDMOS 65V 20DB SOT12232

BLP15M7160PY Parametric

Parameter NameAttribute value
Transistor typeLDMOS (dual), common source
frequency860MHz
Gain20dB
Voltage - Test28V
Rated current-
Noise Figure-
Current - Test100mA
Power - output160W
Voltage - Rated65V
Package/casingSOT-1223-2
BLP15M7160P
Power LDMOS transistor
Rev. 5 — 8 January 2016
Product data sheet
1. Product profile
1.1 General description
A 160W LDMOS RF power transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1500 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1.
Typical performance
RF performance at T
h
= 25
C in a common source test circuit.
Test signal
pulsed, class-B
f
(MHz)
860
V
DS
(V)
28
I
Dq
(mA)
100
P
L(AV)
(W)
-
P
L(M)
(W)
160
G
p
(dB)
20
D
(%)
62
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the HF to 1500 MHz frequency range
Industrial applications in the HF to 1500 MHz frequency range
Single product Doherty applications
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