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AXUV16 ELG

Description
SENSOR ELECTRON DETECTION 40DIP
CategoryThe sensor   
File Size767KB,3 Pages
ManufacturerOpto Diode Corp
Environmental Compliance
Download Datasheet Parametric View All

AXUV16 ELG Overview

SENSOR ELECTRON DETECTION 40DIP

AXUV16 ELG Parametric

Parameter NameAttribute value
wavelength-
Color - Enhance-
spectrum range-
Diode type-
Responsiveness at different nm-
Response time500ns
Current - Dark (Typical)-
Effective area10mm²
perspective-
Operating temperature-10°C ~ 40°C
Installation typeThrough hole
Package/casing-
From Deep UV to Mid-IR
An ITW Company
Photodiode 16 Element
FEATURES
40 Pin Dual-In-Line Package
Ideal for Electron Detection
100% Internal QE
Protective Cover Plate
3
AXUV16ELG
Electro-Optical Characteristics at 25 °C
Parameters
Active Area
Responsivity
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Shunt Resistance (per element)
Test Conditions
2 mm x 5 mm
(see graphs on next page)
I
R
= 1 µA
V
R
= 0 V
V
R
= 0 V
V
f
= ± 10 mV
100
25
700
500
2000
Min
Typ
10
Max
Units
mm
2
A/W
Volts
pF
nsec
MOhms
Thermal Parameters
Storage and Operating Temperature Range
Ambient
1
Nitrogen or Vacuum
Maximum Junction Temperature
Lead Soldering Temperature
2
1
Units
-10 °C to 40 °C
-20 °C to 80 °C
70 °C
260 °C
Temperatures exceeding these parameters may create oxide growth on the active area.
Over time responsivity to low energy radiation and wavelengths below 150 nm will be compromised.
0.080" from case for 10 seconds.
Shipped with temporary cover to protect the photodiode array and wire bonds.
Review the Application Note, “Handling Precautions for AXUV, SXUV, and UVG Detectors”, prior to removing cover.
2
3
Revision May 25, 2018
Page 1 of 3
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