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TSZL52C6V8 RWG

Description
DIODE ZENER 6.8V 200MW 1005
Categorysemiconductor    Discrete semiconductor   
File Size139KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSZL52C6V8 RWG Overview

DIODE ZENER 6.8V 200MW 1005

TSZL52C6V8 RWG Parametric

Parameter NameAttribute value
Voltage - Zener (nominal) (Vz)6.8V
Tolerance±5%
Power - Max200mW
Impedance (max) (Zzt)8 Ohms
Current at different Vr - Reverse leakage current100nA @ 3V
Voltage at different If - Forward (Vf900mV @ 10mA
Operating temperature-55°C ~ 125°C(TJ)
Installation typesurface mount
Package/casing1005 (2512 metric)
Supplier device packaging1005
TSZL52C2V4 thru TSZL52C39
Taiwan Semiconductor
Small Signal Product
SMD Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 39V
- Designed for mounting on small surface
- Extremely thin / leadless package
- Packing code with suffix "G" means
green compound (halogen-free)
1005
MECHANICAL DATA
- Case: 1005
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- Polarity : Indicated by cathode band
- Weight : 0.006 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
Forward Current, Surge Peak
8.3 ms Single Half Sine-Wave Superimposed on Rate Load
Junction and Storage Temperature Range
SYMBOL
P
D
V
F
I
FSM
T
J
, T
STG
VALUE
200
0.9
2
-55 to +125
UNIT
mW
V
A
o
@ I
F
= 10mA
C
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Version: D14
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