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S1GL MQG

Description
DIODE GEN PURP 400V 1A SUB SMA
Categorysemiconductor    Discrete semiconductor   
File Size176KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

S1GL MQG Overview

DIODE GEN PURP 400V 1A SUB SMA

S1GL MQG Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)400V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.1V @ 1A
speedStandard recovery >500ns, >200mA (Io)
Reverse recovery time (trr)1.8µs
Current at different Vr - Reverse leakage current5µA @ 400V
Capacitance at different Vr, F9pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-219AB
Supplier device packagingSub SMA
Operating Temperature - Junction-55°C ~ 175°C
S1AL - S1ML
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Surface Mount Rectifier
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low-Profile Package
- Low power loss, high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Sub SMA
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Typical junction capacitance (Note 2)
Typical reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
t
rr
R
θJL
R
θJA
T
J
T
STG
25
85
- 55 to +175
- 55 to +175
SYMBOL
S1AL S1BL S1DL S1GL S1JL S1KL S1ML
1AL
50
35
50
1BL
100
70
100
1DL
200
140
200
1GL
400
280
400
1
30
1.1
5
50
9
1.8
30
85
1JL
600
420
600
1KL
800
560
800
1ML
1000
700
1000
V
V
V
A
A
V
μA
pF
μs
°C/W
°C
°C
UNIT
Document Number: DS_D1410010
Version: O15

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