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BZS55B3V9 RXG

Description
DIODE ZENER 3.9V 500MW 1206
Categorysemiconductor    Discrete semiconductor   
File Size360KB,7 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BZS55B3V9 RXG Overview

DIODE ZENER 3.9V 500MW 1206

BZS55B3V9 RXG Parametric

Parameter NameAttribute value
Voltage - Zener (nominal) (Vz)3.9V
Tolerance±2%
Power - Max500mW
Impedance (max) (Zzt)85 Ohms
Current at different Vr - Reverse leakage current2µA @ 1V
Voltage at different If - Forward (Vf1.5V @ 10mA
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casing1206 (3216 metric)
Supplier device packaging1206
BZS55B2V4 - BZS55B36
Taiwan Semiconductor
500mW 2% Zener Diodes
FEATURES
Wide zener voltage range selection: 2.4V to 36V
VZ Tolerance Selection of ± 2%
Surface device type mountin
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
tot
V
F
at I
F
=10mA
T
J
Max.
Package
Configuration
VALUE
2.4-36
5
500
1.5
150
1206
Single dice
UNIT
V
mA
mW
V
°C
APPLICATIONS
Low voltage stabilzers or voltage references
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
● Case: 1206
● Molding compound: UL flammability classification
rating 94HB
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
● Weight: 0.01g (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=10mA
Total power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
tot
T
J
T
STG
PART NUMBER
1.5
500
-55 to +150
-55 to +150
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
300
UNIT
°C/W
1
Version:C1612
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