BZS55B2V4 - BZS55B36
Taiwan Semiconductor
500mW 2% Zener Diodes
FEATURES
●
●
●
●
Wide zener voltage range selection: 2.4V to 36V
VZ Tolerance Selection of ± 2%
Surface device type mountin
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
tot
V
F
at I
F
=10mA
T
J
Max.
Package
Configuration
VALUE
2.4-36
5
500
1.5
150
1206
Single dice
UNIT
V
mA
mW
V
°C
APPLICATIONS
●
●
●
●
Low voltage stabilzers or voltage references
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
● Case: 1206
● Molding compound: UL flammability classification
rating 94HB
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
● Weight: 0.01g (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=10mA
Total power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
tot
T
J
T
STG
PART NUMBER
1.5
500
-55 to +150
-55 to +150
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
300
UNIT
°C/W
1
Version:C1612
BZS55B2V4 - BZS55B36
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
ZENER VOLTAGE
PART
NUMBER
MARKING
CODE
Min.
BZS55B2V4
BZS55B2V7
BZS55B3V0
BZS55B3V3
BZS55B3V6
BZS55B3V9
BZS55B4V3
BZS55B4V7
BZS55B5V1
BZS55B5V6
BZS55B6V2
BZS55B6V8
BZS55B7V5
BZS55B8V2
BZS55B9V1
BZS55B10
BZS55B11
BZS55B12
BZS55B13
BZS55B15
BZS55B16
BZS55B18
BZS55B20
BZS55B22
BZS55B24
BZS55B27
BZS55B30
BZS55B33
BZS55B36
2V4
2V7
3
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
V
Z
@ I
ZT
V
Nom.
2.40
2.70
3.00
3.30
3.60
3.90
4.30
4.70
5.10
5.60
6.20
6.80
7.50
8.20
9.10
10.00
11.00
12.00
13.00
15.00
16.00
18.00
20.00
22.00
24.00
27.00
30.00
33.00
36.00
Max.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
TEST
CURRENT
I
ZT
mA
REGULAR
IMPEDANCE
Z
ZT
@ I
ZT
Ω
Max.
85
85
85
85
85
85
80
70
50
30
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
Z
ZK
@ I
ZK
Ω
Max.
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
TEST
CURRENT
I
ZK
mA
LEAKAGE
CURRENT
I
R
@ V
R
µA
Max.
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
5.0
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
15.0
16.0
18.0
20.0
22.0
24.0
27.0
V
Notes:
1. The Zener Voltage (VZ) is tested under pulse condition of 10ms
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an RMS value equal to 10% of the dc zener current
2
Version:C1612
BZS55B2V4 - BZS55B36
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Typical Forward Characteristics
100
100
Zener Breakdown Characteristics
Forward Current (mA)
10
Zener Current (mA)
80
T
A
=25
o
C
60
1
0.1
40
0.01
T
A
=25
o
C
20
0.001
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
0
4
8
12
16
20
Forward Voltage (V)
Zener Voltage (V)
Zener Breakdown
50
600
500
Power Dissipation (mW)
400
300
200
100
0
15
20
25
30
Zener Voltage (V)
35
0
Admissible Power Dissipation Curve
40
Zener Current (mA)
30
20
10
0
30
60
90
120
150
Ambient Temperature (
o
C)
180
4
Version:C1612
Embedded System
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