PC123XNNSZ0F Series
PC123XNNSZ0F
Series
DIP 4pin Reinforced Insulation Type
Photocoupler
■
Description
PC123XNNSZ0F Series
contains an IRED optically
coupled to a phototransistor.
It is packaged in a 4-pin DIP, available in wide-lead
spacing option and SMT gullwing lead-form option.
Input-output isolation voltage(rms) is 5kV.
CTR is 50% to 400% at input current of 5mA
■
Agency approvals/Compliance
1. Recognized by UL1577 (Double protection isolation),
fi
le No. E64380 (as model No.
PC123)
2. Approved by BSI, BS-EN60065, file No. 7087, BS-
EN60950
fi
le No. 7409, (as model No.
PC123)
3. Approved by SEMKO, EN60065, EN60950, (as mod-
el No.
PC123)
4. Approved by DEMKO, EN60065, EN60950, (as mod-
el No.
PC123)
5. Approved by NEMKO, EN60065, EN60950, (as mod-
el No.
PC123)
6. Approved by FIMKO, EN60065, EN60950, (as model
No.
PC123)
7. Recognized by CSA
fi
le No. CA95323, (as model No.
PC123)
8. Approved by VDE, DIN EN60747-5-2(
∗
) (as an op-
tion),
fi
le No. 40008087 (as model No.
PC123)
9. Package resin : UL
fl
ammability grade (94V - 0)
(
∗
) DIN EN60747-5-2 : successor standard of DIN VDE0884.
■
Features
1. 4-pin DIP package
2. Double transfer mold package (Ideal for Flow Solder-
ing)
3. Current transfer ratio (CTR : MIN. 50% at I
F
=5
mA,
V
CE
=5V)
4. Several CTR ranks available
5. Reinforced insulation type (Isolation distance : MIN.
0.4mm)
6. Long creepage distance type (wide lead-form type
only : MIN. 8mm)
7. High isolation voltage between input and output
(V
iso
(rms) : 5kV)
8. RoHS directive compliant
■
Applications
1. I/O isolation for MCUs (Micro Controller Units)
2. Noise suppression in switching circuits
3. Signal transmission between circuits of different po-
tentials and impedances
4. Over voltage detection
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A09501FEN
Date Sep. 1. 2006
© SHARP Corporation
PC123XNNSZ0F Series
■
Internal Connection Diagram
1
4
1
2
3
2
3
4
Anode
Cathode
Emitter
Collector
■
Outline Dimensions
1. Through-Hole [ex.
PC123XNNSZ0F]
Rank mark
Factory identification mark
Date code
4
(Unit : mm)
2. Through-Hole (VDE option)
[ex.
PC123XNYSZ0F]
Anode mark
Rank mark
Factory identification mark
Date code
4
Anode mark
1
4.58
±0.30
1
1.2
±0.3
0.6
±0.2
0.6
±0.2
PC123
2
3
1.2
±0.3
PC123
2
4
6.5
±0.3
3
2.54
±0.25
6.5
±0.3
7.62
±0.30
4.58
±0.30
2.54
±0.25
VDE idenfication mark
4.58
±0.30
SHARP mark "S"
7.62
±0.30
0.5
TYP.
3.5
±0.5
4.58
±0.30
0.5
TYP.
3.5
3.5
±0.5
±0.5
0.26
±0.10
θ
θ
0.26
±0.10
θ
θ
: 0 to 13˚
θ
0.5
θ
: 0 to 13˚
±0.1
2.7
±0.5
2.7
Epoxy resin
0.5
±0.1
Product mass : approx. 0.23g
Product mass : approx. 0.23g
3. Wide Through-Hole Lead-Form
[ex.
PC123XNNFZ0F]
±0.25
4. Wide Through-Hole Lead-Form (VDE option)
[ex.
PC123XNYFZ0F]
±0.25
Rank mark
Anode mark
±0.3
±0.2
Factory identification mark
±0.3
Rank mark
Anode mark
1.2
0.6
±0.2
Factory identification mark
2.54
1.2
0.6
1
2.54
Date code
4
Date code
1
4
4
±0.30
±0.1
±0.1
1.0
4.58
6.5
±0.3
7.62
±0.30
1.0
6.5
±0.3
7.62
±0.30
SHARP mark "S"
VDE idenfication mark
4.58
±0.30
4.58
2
PC123
3
2
PC123
3
±0.30
4.58
±0.30
3.5
±0.5
2.7
MIN.
MIN.
Epoxy resin
10.16
±0.50
2.7
Epoxy resin
10.16
±0.50
0.26
±0.10
0.26
±0.10
0.5
±0.1
0.5
±0.1
Product mass : approx. 0.23g
2
Product mass : approx. 0.23g
Sheet No.: D2-A09501FEN
±0.5
3.0
±0.5
Epoxy resin
3.0
±0.5
PC123XNNSZ0F Series
(Unit : mm)
5. SMT Gullwing Lead-Form (VDE option)
[ex.
PC123XNYIP0F]
Rank mark
Anode mark
Factory identification mark
6. Wide SMT Gullwing Lead-Form
[ex.
PC123XNNUP0F]
Rank mark
1.2
±0.3
1.2
±0.3
0.6
±0.2
0.6
±0.2
Date code
1
4
2.54
±0.25
Anode mark
Factory identification mark
Date code
1
4
2
PC123
4
6.5
±0.3
7.62
±0.30
4.58
±0.30
3
2
PC123
6.5
±0.3
7.62
±0.30
0.25
±0.25
3
SHARP mark "S"
VDE
idenfication mark
0.26
±0.10
2.54
±0.25
1.0
±0.1
4.58
±0.30
4.58
±0.30
3.5
±0.5
0.5
±0.1
0.75
±0.25
4.58
±0.30
3.5
±0.5
0.26
±0.10
0.35
±0.25
Epoxy resin
0.75
±0.25
10.16
12
±0.50
1.0
+0.4
−0.0
Epoxy resin
10.0
+0.0
−0.5
1.0
+0.4
−0.0
2.54
±0.25
MAX
Product mass : approx. 0.22g
Product mass : approx. 0.22g
7. Wide SMT Gullwing Lead-Form (VDE option)
[ex.
PC123XNYUP0F]
Rank mark
Anode mark
1.2
±0.3
0.6
±0.2
Factory identification mark
Date code
1
4
±0.30
1.0
±0.1
6.5
±0.3
0.26
±0.10
2.54
±0.25
7.62
±0.30
0.25
±0.25
4.58
2
PC123
4
3
SHARP mark "S"
VDE
idenfication mark
4.58
±0.30
3.5
±0.5
Epoxy resin
0.75
±0.25
10.16
±0.50
12
MAX
0.75
±0.25
0.5
±0.1
Product mass : approx. 0.22g
Sheet No.: D2-A09501FEN
3
PC123XNNSZ0F Series
Date code (2 digit)
1st digit
Year of production
Mark
A.D.
A
2002
B
2003
C
2004
D
2005
E
2006
F
2007
H
2008
J
2009
K
2010
L
2011
M
2012
N
:
2nd digit
Month of production
Month
Mark
January
1
February
2
March
3
April
4
May
5
June
6
July
7
August
8
September
9
October
O
November
N
December
D
A.D.
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
Mark
P
R
S
T
U
V
W
X
A
B
C
:
repeats in a 20 year cycle
Factory identification mark and Plating material
Factory identification Mark
no mark
Japan
or
or
China
SnCu (Cu : TYP. 2%)
* Up to Date code "T4" (April 2005), SnBi (Bi : TYP. 2%).
** This factory marking is for identification purpose only.
Please contact the local SHARP sales representative to see the actural status of the production.
Country of origin
Plating material
SnCu (Cu : TYP. 2%)
SnBi (Bi : TYP. 2%)
SnCu (Cu : TYP. 2%)*
Indonesia
Rank mark
Refer to the Model Line-up table.
Sheet No.: D2-A09501FEN
4
PC123XNNSZ0F Series
■
Absolute Maximum Ratings
Parameter
Forward current
*1
Peak forward current
Input
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Output
Collector current
Collector power dissipation
Total power dissipation
*2
Isolation voltage
Operating temperature
Storage temperature
*2
Soldering temperature
*1 Pulse width≤100ms, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f = 60Hz
*3 For 10s
(T
a
=
25̊C)
Symbol
Rating
Unit
I
F
50
mA
I
FM
1
A
V
R
6
V
P
70
mW
V
CEO
70
V
V
ECO
6
V
I
C
50
mA
P
C
150
mW
P
tot
200
mW
V
iso
(rms)
5
kV
T
opr
̊C
−
30 to
+
100
T
stg
̊C
−
55 to
+
125
T
sol
260
̊C
■
Electro-optical Characteristics
Parameter
Forward voltage
Input Reverse current
Terminal capacitance
Collector dark current
Output Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
Collector-emitter saturation voltage
Transfer Isolation resistance
charac
−
Floating capacitance
teristics Cut-off frequency
Rise time
Response time
Fall time
Symbol
V
F
I
R
C
t
I
CEO
BV
CEO
BV
ECO
I
C
V
CE(sat)
R
ISO
C
f
f
C
t
r
t
f
Condition
I
F
=
20mA
V
R
=
4V
V
=
0, f
=
1kHz
V
CE
=
50V, I
F
=
0
I
C
=
0.1mA, I
F
=
0
I
E
=
10
μ
A, I
F
=
0
I
F
=
5mA, V
CE
=
5V
I
F
=
20mA, I
C
=
1mA
DC500V, 40 to 60%RH
V
=
0, f
=
1MHz
V
CE
=
5V, I
C
=
2mA, R
L
=
100
Ω
,
−
3dB
V
CE
=
2V, I
C
=
2mA, R
L
=
100
Ω
MIN.
−
−
−
−
70
6
2.5
−
5×10
10
−
−
−
−
TYP.
1.2
−
30
−
−
−
−
0.1
1×10
11
0.6
80
4
3
MAX.
1.4
10
250
100
−
−
20
0.2
−
1
−
18
18
(T
a
=
25̊C)
Unit
V
μ
A
pF
nA
V
nA
mA
V
Ω
pF
kHz
μ
s
μ
s
Sheet No.: D2-A09501FEN
5
Analog electronics
京公网安备 11010802033920号
EEWORLD
