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UNR522600L

Description
TRANS PREBIAS NPN 150MW SMINI3
Categorysemiconductor    Discrete semiconductor   
File Size289KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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UNR522600L Overview

TRANS PREBIAS NPN 150MW SMINI3

UNR522600L Parametric

Parameter NameAttribute value
Transistor typeNPN - Pre-biased
Current - Collector (Ic) (Maximum)600mA
Voltage - collector-emitter breakdown (maximum)20V
Resistor - Substrate (R1)4.7 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)100 @ 50mA,5V
Vce saturation value (maximum value) when different Ib,Ic80mV @ 2.5mA,50mA
Current - collector cutoff (maximum)1µA(ICBO)
Frequency - Transition200MHz
Power - Max150mW
Installation typesurface mount
Package/casingSC-70,SOT-323
Supplier device packagingS mini 3-G1

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