This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR212x Series
(UN212x Series)
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
■
Features
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
•
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
1
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
■
Resistance by Part Number
•
UNR2121
•
UNR2122
•
UNR2123
•
UNR2124
•
UNR212X
•
UNR212Y
Marking Symbol (R
1
)
(UN2121)
7A
2.2 kΩ
(UN2122)
7B
4.7 kΩ
(UN2123)
7C
10 kΩ
(UN2124)
7D
2.2 kΩ
(UN212X)
7I
0.27 kΩ
(UN212Y)
7Y
3.1 kΩ
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
ce
Parameter
/D
isc
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
on
tin
T
stg
Ma
int
en
an
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
UNR212X
Collector-emitter cutoff current (Base open)
UNR212X
Emitter-base
UNR2121
cutoff current UNR2122/212X/212Y
(Collector open) UNR2123/2124
Forward current UNR2121
transfer ratio
UNR2122/212Y
UNR2123/2124
UNR212X
h
FE
V
CE
= −10
V, I
C
= −5
mA
40
50
60
20
d
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Pl
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ct
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.
10˚
(R
2
)
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
5 kΩ
4.6 kΩ
1.1
+0.2
–0.1
(0.65)
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
R
1
0 to 0.1
Rating
−50
−50
200
150
Unit
V
V
B
C
R
2
E
−500
mA
°C
mW
°C
ue
−55
to
+150
Conditions
Min
−50
−50
Typ
Max
Unit
V
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
−1.0
−1.0
−5
−2
−1
µA
µA
−
0.1
−
0.5
mA
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00008CED
0.4
±0.2
5˚
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR212x Series
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Collector-emitter saturation voltage
UNR212X/212Y
Output voltage high-level
Output voltage low-level
Transition frequency
Input resistance UNR2121/2124
UNR2122
UNR2123
V
OH
V
OL
f
T
R
1
Symbol
V
CE(sat)
Conditions
I
C
= −100
mA, I
B
= −5
mA
I
C
= −10
mA, I
B
= −
0.3 mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
500
Ω
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
500
Ω
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
−30%
200
2.2
4.7
10
0.27
3.1
+30%
−4.9
−
0.2
V
V
MHz
kΩ
Min
Typ
Max
−
0.25
Unit
V
UNR212Y
Resistance ratio
R
1
/R
2
UNR2124
UNR212X
UNR212Y
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
250
150
100
50
0
0
Ma
int
en
40
80
an
ce
120
Ambient temperature T
a
(
°C
)
2
/D
isc
200
160
d
pla inc
Pl
ea
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pla m d m es
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du
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ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
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/ ion
.
0.8
1.0
1.2
0.17
0.22
0.27
0.043
0.53
0.054
0.67
0.065
0.81
SJH00008CED
Total power dissipation P
T
(mW)
M
ain
Di
sc te
on na
tin nc
ue e/
d
UNR212X
on
tin
ue
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR212x Series
Characteristics charts of UNR2121
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
= −10
V
−240
Collector current I
C
(mA)
−160
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−10
Forward current transfer ratio h
FE
−200
300
T
a
=
75°C
M
ain
Di
sc te
on na
tin nc
ue e/
d
T
a
=
75°C
−120
−1
200
−80
25°C
−40
−
0.2 mA
−
0.1
100
25°C
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−1
Collector-emitter voltage V
CE
(V)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
12
10
f
=
1 MHz
I
E
=
0
T
a
=
25°C
8
6
4
2
−1
−10
−100
ue
0
−
0.1
Collector-base voltage V
CB
(V)
T
a
=
25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
−300
Ma
int
en
an
I
C
V
CE
ce
Characteristics charts of UNR2122
−100
Collector current I
C
(mA)
−200
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
−10
Forward current transfer ratio h
FE
−250
−150
−100
−50
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−1
Collector-emitter voltage V
CE
(V)
d
pla inc
Pl
ea
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du
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ct
e
life
an ut
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cy
on es
cle
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sta
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.
−25°C
−
0.1 mA
−25°C
−10
−100
−1
000
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
O
= −
0.2 V
T
a
=
25°C
Output current I
O
(µA)
Input voltage V
IN
(V)
−10
3
−10
−10
2
−1
−10
−
0.1
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
tin
/D
isc
on
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
I
C
/ I
B
=
10
160
V
CE
=
−10
V
T
a
=
75°C
120
25°C
−1
T
a
=
75°C
25°C
80
−25°C
40
−
0.1
−25°C
−10
−100
−1
000
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00008CED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR212x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
24
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
=
25°C
20
Output current I
O
(µA)
16
Input voltage V
IN
(V)
−10
3
−10
12
−10
2
−1
0
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Characteristics charts of UNR2123
I
C
V
CE
−240
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
T
a
= 25°C
Collector current I
C
(mA)
−160
−120
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.5 mA
−10
Forward current transfer ratio h
FE
−200
−
0.6 mA
−80
−
0.4 mA
−
0.3 mA
−40
−
0.2 mA
ue
−
0.1 mA
−10
0
on
tin
0
−2
−4
−6
−8
−12
−
0.01
−1
Collector-emitter voltage V
CE
(V)
ce
C
ob
V
CB
an
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
24
20
Ma
int
en
f
=
1 MHz
I
E
=
0
T
a
=
25°C
Output current I
O
(µA)
16
Input voltage V
IN
(V)
12
8
4
0
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
4
d
pla inc
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ct
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cy
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.
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−1
−10
M
ain
Di
sc te
on na
tin nc
ue e/
d
8
−10
−
0.1
4
−
0.01
−
0.1
−100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
I
C
/ I
B
=
10
200
V
CE
= −10
V
T
a
=
75°C
25°C
150
−1
100
−25°C
T
a
=
75°C
−
0.1
25°C
50
−25°C
−10
−100
−1
000
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
/D
isc
I
O
V
IN
V
IN
I
O
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
O
= −
0.2 V
T
a
=
25°C
−10
3
−10
−10
2
−1
−10
−
0.1
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00008CED
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR212x Series
Characteristics charts of UNR2124
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
−300
Collector current I
C
(mA)
−200
M
ain
Di
sc te
on na
tin nc
ue e/
d
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
−10
−150
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−10
Forward current transfer ratio h
FE
−250
300
T
a
=
75°C
200
25°C
−25°C
−1
T
a
=
75°C
−100
25°C
−
0.1
100
0
0
−2
−4
−6
−8
−12
−
0.01
−1
Collector-emitter voltage V
CE
(V)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
24
20
f
=
1 MHz
I
E
=
0
T
a
=
25°C
16
12
8
4
ue
0
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Ma
int
en
an
I
C
V
CE
−240
ce
Characteristics charts of UNR212X
Collector-emitter saturation voltage V
CE(sat)
(V)
T
a
=
25°C
−100
Collector current I
C
(mA)
−160
I
B
= −1.6
mA
−1.4
mA
−1.2
mA
−1.0
mA
−
0.8 mA
−
0.6 mA
−
0.4 mA
−
0.2 mA
−10
Forward current transfer ratio h
FE
−200
−120
−80
−
0.1
−40
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−1
Collector-emitter voltage V
CE
(V)
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
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ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
−10
−100
−1
000
−50
−25°C
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
O
= −
0.2 V
T
a
=
25°C
Output current I
O
(µA)
Input voltage V
IN
(V)
−10
3
−10
−10
2
−1
−10
−
0.1
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
tin
/D
isc
on
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
I
C
/ I
B
=
10
240
V
CE
= −10
V
200
160
−1
T
a
=
75°C
25°C
– 25°C
120
T
a
=
75°C
25°C
80
−25°C
40
−10
−100
−1
000
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00008CED
5
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