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MRF448

Description
TRANS RF NPN 50V 16A 211-11
Categorysemiconductor    Discrete semiconductor   
File Size625KB,8 Pages
ManufacturerM/A-COM Tech(MACOM)
Websitehttp://www.macom.com
Environmental Compliance
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TRANS RF NPN 50V 16A 211-11

MRF448 Parametric

Parameter NameAttribute value
Transistor typeNPN
Voltage - collector-emitter breakdown (maximum)50V
Frequency - Transition-
Noise figure (dB, typical values ​​at different f)-
Gain14dB
Power - Max250W
DC current gain (hFE) at different Ic, Vce (minimum value)10 @ 5A,10V
Current - Collector (Ic) (Maximum)16A
Operating temperature-
Installation typeBase installation
Package/casing211-11, type 2
Supplier device packaging211-11, type 2
MRF448
The RF Line NPN Silicon Power Transistor
250W, 30MHz, 50V
Designed primarily for high–voltage applications as a high–power
linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station
equipment.
Rev. V1
Product Image
Specified 50 V, 30 MHz characteristics
Output power = 250 W
Minimum gain = 12 dB
Efficiency = 45%
Intermodulation distortion @ 250 W (PEP) —
IMD = –30 dB (max)
100% tested for load mismatch at all phase angles with 3:1 VSWR
CASE 211–11, STYLE 1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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