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2SK2145-Y(TE85L,F)

Description
MOSFET 2N-CH JFET 50V SMV
CategoryDiscrete semiconductor    The transistor   
File Size303KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SK2145-Y(TE85L,F) Overview

MOSFET 2N-CH JFET 50V SMV

2SK2145-Y(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G5
Reach Compliance Codeunknown
Other featuresLOW NOISE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
FET technologyJUNCTION
JESD-30 codeR-PDSO-G5
Number of components2
Number of terminals5
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2SK2145
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK2145
Audio Frequency Low Noise Amplifier Applications
Including two devices in SM5 (super mini type with 5 leads.)
High |Y
fs
|: |Y
fs
| = 15 mS (typ.) at V
DS
= 10 V, V
GS
= 0
High breakdown voltage: V
GDS
=
−50
V
Low noise: NF = 1.0dB (typ.)
at V
DS
= 10 V, I
D
= 0.5 mA, f = 1 kHz, R
g
= 1 kΩ
High input impedance: I
GSS
=
−1
nA (max) at V
GS
=
−30
V
Unit: mm
Marking
Pin Assignment
(top view)
(Q1, Q2 common)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature
Symbol
V
GDS
I
G
P
D
(Note 1)
T
j
T
stg
Rating
−50
10
300
125
−55
to 125
Unit
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-3L1C
Weight: 0.016 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Start of commercial production
1993-03
1
2014-03-01

2SK2145-Y(TE85L,F) Related Products

2SK2145-Y(TE85L,F) P0603E2183CGTE 2SK2145-BL(TE85L,F
Description MOSFET 2N-CH JFET 50V SMV Fixed Resistor, Thin Film, 0.125W, 218000ohm, 75V, 0.25% +/-Tol, 25ppm/Cel, Surface Mount, 0603, CHIP JFET N-CH 50V SMV
Is it Rohs certified? conform to conform to conform to
Reach Compliance Code unknown compliant unknown
package instruction SMALL OUTLINE, R-PDSO-G5 CHIP -
Other features LOW NOISE ANTI-SULFUR, HIGH PRECISION -
Number of terminals 5 2 -
Package form SMALL OUTLINE SMT -
surface mount YES YES -
Base Number Matches 1 - 1
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