RN2109ACT(TPL3) datasheet, PDF

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RN2109ACT(TPL3): DescriptionTRANS PREBIAS PNP 0.1W CST3; CategoryDiscrete semiconductor The transistor; File Size444KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2109ACT(TPL3) Overview

TRANS PREBIAS PNP 0.1W CST3

RN2109ACT(TPL3) Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.08 A
Minimum DC current gain (hFE)	70
Number of components	1
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.1 W
surface mount	YES
Transistor component materials	SILICON

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RN2107ACT~RN2109ACT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2107ACT, RN2108ACT, RN2109ACT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Top View

0.25±0.03

Unit: mm

•

Extra small package (CST3) is applicable for extra high density

fabrication.

•

Incorporating a bias resistor into a transistor reduces parts count.

1.0±0.05

0.6±0.05

0.5±0.03

0.25±0.03

•

Complementary to RN1107ACT to RN1109ACT

１

２

0.35±0.02

Equivalent Circuit and Bias Resistor Values

Type No.

RN2107ACT

RN2108ACT

RN2109ACT

R1 (kΩ)

R2 (kΩ)

0.15±0.03

0.65±0.02

•

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

３

0.05±0.03

CST3

JEDEC

JEITA

TOSHIBA

Weight:

1.BASE

2.EMITTER

3.COLLECOTR

―

2-1J1A

0.75 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN2107ACT to RN2109ACT

RN2107ACT

Emitter-base voltage

RN2108ACT

RN2109ACT

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2107ACT to RN2109ACT

stg

EBO

Symbol

CBO

CEO

Rating

−50

−6

−7

−15

−80

100*

150

−55

to 150

°C

Unit

* : Mounted on FR4 board (10 mm

10 mm

1 mm)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Start of commercial production

0.38 +0.02

-0.03

0.05±0.03

2004-08

2014-10-21

RN2109ACT(TPL3) Related Products

	RN2109ACT(TPL3)	RN2108ACT(TPL3)	RN2107ACT(TPL3)
Description	TRANS PREBIAS PNP 0.1W CST3	TRANS PREBIAS PNP 0.1W CST3	TRANS PREBIAS PNP 0.1W CST3
Reach Compliance Code	unknown	unknown	unknown
Maximum collector current (IC)	0.08 A	0.08 A	0.08 A
Minimum DC current gain (hFE)	70	80	80
Number of components	1	1	1
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.1 W	0.1 W	0.1 W
surface mount	YES	YES	YES
Transistor component materials	SILICON	SILICON	SILICON
Maker	Toshiba Semiconductor	-	Toshiba Semiconductor

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