TC7SZ00FU
CMOS Digital Integrated Circuits Silicon Monolithic
TC7SZ00FU
1. Functional Description
•
2-Input NAND Gate
2. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
AEC-Q100 (Rev. H) (Note 1)
Wide operating temperature range: T
opr
= -40 to 125
(Note 2)
High output current:
±24
mA (min) at V
CC
= 3.0 V
Super high speed operation: t
pd
= 2.4 ns (typ.) at V
CC
= 5.0 V, C
L
= 50 pF
Operation voltage range: V
CC
= 1.65 to 5.5 V
5.5 V tolerant inputs
5.5 V power down protection output
Matches the performance of TC74LCX series when operated at 3.3 V V
CC
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
Note 2: For devices with the ordering part number ending in J(CT. T
opr
= -40 to 85
for the other devices.
3. Packaging
USV
Start of commercial production
©2015 Toshiba Corporation
1
1998-08
2017-05-17
Rev.3.0
TC7SZ00FU
4. Marking and Pin Assignment
Marking
Pin Assignment (Top view)
5. IEC Logic Symbol
6. Truth Table
A
L
L
H
H
B
L
H
L
H
Y
H
H
H
L
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Supply voltage
Input voltage
DC output voltage
Input diode current
Output diode current
DC output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 3)
(Note 1)
(Note 2)
Note
Rating
-0.5 to 6.0
-0.5 to 6.0
-0.5 to 6.0
-0.5 to V
CC
+ 0.5
-20
-20
±50
±50
200
-65 to 150
mA
mA
mA
mA
mW
Unit
V
V
V
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: V
CC
= 0 V
Note 2: High (H) or Low (L) state. I
OUT
absolute maximum rating must be observed.
Note 3: V
OUT
< GND
©2015 Toshiba Corporation
2
2017-05-17
Rev.3.0
TC7SZ00FU
8. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
(Note 1)
V
IN
V
OUT
T
opr
dt/dv
(Note 2)
(Note 3)
(Note 4)
(Note 5)
V
CC
= 3.3
±
0.3 V
V
CC
= 5.0
±
0.5 V
Note
Test Condition
V
CC
= 1.8
±
0.15 V, 2.5
±
0.2 V
Rating
1.65 to 5.5
1.5 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
-40 to 125
-40 to 85
0 to 20
0 to 10
0 to 5
ns/V
V
V
Unit
V
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
Note 1: Data retention only
Note 2: V
CC
= 0 V
Note 3: High (H) or Low (L) state.
Note 4: For devices with the ordering part number ending in J(CT.
Note 5: For devices except those with the ordering part number ending in J(CT.
Note:
9. Electrical Characteristics
9.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
1.65 to
1.95
2.3 to 5.5
Low-level input voltage
V
IL
1.65 to
1.95
2.3 to 5.5
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -100
µA
1.65
2.3
3.0
4.5
I
OH
= -8 mA
I
OH
= -16 mA
I
OH
= -24 mA
I
OH
= -32 mA
Low-level output voltage
V
OL
V
IN
= V
IH
I
OL
= 100
µA
2.3
3.0
3.0
4.5
1.65
2.3
3.0
4.5
I
OL
= 8 mA
I
OL
= 16 mA
I
OL
= 24 mA
I
OL
= 32 mA
Input leakage current
Power-OFF leakage
current
Quiescent supply current
I
IN
I
OFF
I
CC
V
IN
= 5.5 V or GND
V
IN
or V
OUT
= 5.5 V
V
IN
= V
CC
or GND
2.3
3.0
3.0
4.5
0 to 5.5
0
5.5
Min
V
CC
×
0.88
V
CC
×
0.75
1.55
2.2
2.9
4.4
1.9
2.4
2.3
3.8
Typ.
1.65
2.3
3.0
4.5
2.15
2.8
2.68
4.2
0.0
0.0
0.0
0.0
0.1
0.15
0.22
0.22
Max
V
CC
×
0.12
V
CC
×
0.25
0.1
0.1
0.1
0.1
0.3
0.4
0.55
0.55
±1.0
1
2
µA
µA
µA
V
V
V
Unit
V
©2015 Toshiba Corporation
3
2017-05-17
Rev.3.0
TC7SZ00FU
9.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
1.65 to
1.95
2.3 to 5.5
Low-level input voltage
V
IL
1.65 to
1.95
2.3 to 5.5
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -100
µA
1.65
2.3
3.0
4.5
I
OH
= -8 mA
I
OH
= -16 mA
I
OH
= -24 mA
I
OH
= -32 mA
Low-level output voltage
V
OL
V
IN
= V
IH
I
OL
= 100
µA
2.3
3.0
3.0
4.5
1.65
2.3
3.0
4.5
I
OL
= 8 mA
I
OL
= 16 mA
I
OL
= 24 mA
I
OL
= 32 mA
Input leakage current
Power-OFF leakage current
Quiescent supply current
I
IN
I
OFF
I
CC
V
IN
= 5.5 V or GND
V
IN
or V
OUT
= 5.5 V
V
IN
= V
CC
or GND
2.3
3.0
3.0
4.5
0 to 5.5
0
5.5
Min
V
CC
×
0.88
V
CC
×
0.75
1.55
2.2
2.9
4.4
1.9
2.4
2.3
3.8
Max
V
CC
×
0.12
V
CC
×
0.25
0.1
0.1
0.1
0.1
0.3
0.4
0.55
0.55
±10.0
10
20
µA
µA
µA
V
V
V
Unit
V
©2015 Toshiba Corporation
4
2017-05-17
Rev.3.0
TC7SZ00FU
9.3. DC Characteristics (Note) (Unless otherwise specified, T
a
= -40 to 125
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
1.65 to
1.95
2.3 to 5.5
Low-level input voltage
V
IL
1.65 to
1.95
2.3 to 5.5
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -100
µA
1.65
2.3
3.0
4.5
I
OH
= -8 mA
I
OH
= -16 mA
I
OH
= -24 mA
I
OH
= -32 mA
Low-level output voltage
V
OL
V
IN
= V
IH
I
OL
= 100
µA
2.3
3.0
3.0
4.5
1.65
2.3
3.0
4.5
I
OL
= 8 mA
I
OL
= 16 mA
I
OL
= 24 mA
I
OL
= 32 mA
Input leakage current
Power-OFF leakage current
Quiescent supply current
I
IN
I
OFF
I
CC
V
IN
= 5.5 V or GND
V
IN
or V
OUT
= 5.5 V
V
IN
= V
CC
or GND
2.3
3.0
3.0
4.5
0 to 5.5
0
5.5
Min
V
CC
×
0.88
V
CC
×
0.75
1.55
2.2
2.9
4.4
1.7
2.2
2.0
3.4
Max
V
CC
×
0.12
V
CC
×
0.25
0.1
0.1
0.1
0.1
0.45
0.6
0.8
0.8
±20.0
100
200
µA
µA
µA
V
V
V
Unit
V
Note:
For devices with the ordering part number ending in J(CT.
©2015 Toshiba Corporation
5
2017-05-17
Rev.3.0
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