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KSE13003 — NPN Silicon Transistor
March 2008
KSE13003
NPN Silicon Transistor
High Voltage Switch Mode Applications
• High Voltage Capability
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1
TO-126
2.Collector
3.Base
1. Emitter
Absolute Maximum Ratings*
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
T
C
= 25°C unless otherwise noted
(notes_1)
Parameter
Value
700
400
9
1.5
3
0.75
20
150
-65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Collector Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
h
FE
Classification
Classification
h
FE
*
* Test on V
CE
= 2V, I
C
= 0.5A.
H1
9 ~ 16
H2
14~ 21
H3
19 ~ 26
© 2007 Fairchild Semiconductor Corporation
KSE13003 Rev. 1.0.0
1
www.fairchildsemi.com
KSE13003 — NPN Silicon Transistor
Electrical Characteristics
Symbol
BV
CEO
I
EBO
h
FE
V
CE
(sat)
T
C
= 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector Emitter Saturation Voltage
Conditions
I
C
= 5mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
=1A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
I
C
= 1.5A, I
B
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
V
CB
= 10V , f = 0.1MHz
V
CE
= 10V, I
C
= 0.1A
V
CC
=125V, I
C
= 1A
I
B1
= 0.2A, I
B2
= - 0.2A
R
L
= 125W
Min.
400
Typ.
Max
10
Units
V
mA
8
5
40
0.5
1
3
1
1.2
21
V
V
V
V
V
pF
MHz
1.1
4.0
0.7
ms
ms
ms
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
*Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
4
* Pulse Test: Pulse Width=5ms, Duty Cycle£10%
Package Marking and Ordering Information
Device Item
(notes_2)
KSE13003H1ASTU
KSE13003H2ASTU
KSE13003H3ASTU
Notes_2 :
1) The Affix “-H1/-H2/-H3” means the hFE classification.
2) The Sufix “-STU” means the TO126 short lead package and the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com
Device Marking
1 E13003
2 E13003
3 E13003
Package
TO-126
TO-126
TO-126
Packing Method
TUBE
TUBE
TUBE
Remarks
© 2007 Fairchild Semiconductor Corporation
KSE13003 Rev. 1.0.0
2
www.fairchildsemi.com
KSE13003 — NPN Silicon Transistor
Typical Performance Characteristics
2.0
100
I
C
[A], COLLECTOR CURRENT
1.6
h
FE
, DC CURRENT GAIN
I
B
= 500mA
I
B
= 450mA
I
B
= 400mA
V
CE
= 2V
1.2
I
B
= 350mA
I
B
= 300mA
I
B
= 250mA
I
B
= 200mA
I
B
= 150mA
I
B
= 100mA
I
B
= 50mA
10
0.8
1
0.4
I
B
= 0mA
0.0
0
1
2
3
4
5
0.1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
10
I
C
= 4 I
B
t
STG
, t
F
[
m
s], TIME
1
V
BE
(sat)
t
STG
1
t
F
0.1
0.1
V
CE
(sat)
0.01
0.01
0.1
1
10
0.01
0.1
1
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
10
30
I
C
MAX. (pulse)
m
s
10
25
s
1m
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
I
C
MAX. (DC)
1
s
5m
s
0
m
10
20
15
0.1
10
5
0.01
0
1
10
100
1000
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
© 2007 Fairchild Semiconductor Corporation
KSE13003 Rev. 1.0.0
3
Figure 6. Power Derating
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Microcontroller MCU
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