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AOTF3N90

Description
MOSFET N-CH 900V 2.4A TO220F
Categorysemiconductor    Discrete semiconductor   
File Size325KB,5 Pages
ManufacturerAOS
Websitehttp://www.aosmd.com
Environmental Compliance
Download Datasheet Parametric View All

AOTF3N90 Overview

MOSFET N-CH 900V 2.4A TO220F

AOTF3N90 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)900V
Current - Continuous Drain (Id) at 25°C2.4A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs6.7 ohms @ 1.5A, 10V
Vgs (th) (maximum value) when different Id4.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)16nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)540pF @ 25V
FET function-
Power dissipation (maximum)35W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220-3F
Package/casingTO-220-3 whole package
AOTF3N90
900V, 2.4A N-Channel MOSFET
General Description
The AOTF3N90 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability this part can
be adopted quickly into new and existing offline power
supply designs.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
1000V@150℃
2.4A
< 6.7Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOTF3N90L
Top View
TO-220F
D
G
G
AOTF3N90
D
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF3N90
900
±30
2.4*
1.5*
6.7
2
60
120
5
35
0.3
-55 to 150
300
AOTF3N90
65
3.6
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
Units
°C/W
°C/W
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
Repetitive avalanche energy
Single pulsed avalanche energy
E
AS
Peak diode recovery dv/dt
dv/dt
T
C
=25°C
P
D
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
T
J
, T
STG
Maximum lead temperature for soldering
T
L
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient
A,D
R
θJA
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev0: Oct 2012
www.aosmd.com
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