FZ800R12KS4B2NOSA1 datasheet, PDF

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FZ800R12KS4B2NOSA1: DescriptionMODULE IGBT A-IHM130-1; CategoryDiscrete semiconductor The transistor; File Size381KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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FZ800R12KS4B2NOSA1 Overview

MODULE IGBT A-IHM130-1

FZ800R12KS4B2NOSA1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	24 weeks
Shell connection	ISOLATED
Maximum collector current (IC)	1200 A
Collector-emitter maximum voltage	1200 V
Configuration	COMPLEX
JESD-30 code	R-XUFM-X7
Number of components	2
Number of terminals	7
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal off time (toff)	660 ns
Nominal on time (ton)	225 ns
Base Number Matches	1

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TechnischeInformation/TechnicalInformation

IGBT-Module

IGBT-modules

FZ800R12KS4_B2

HochleistungsmodulmitAlSiCBodenplatteundschnellemIGBT2fürhochfrequentesSchalten

HighPowerModulewithAlSiCbaseplateandshorttailIGBT2forhighswitchingfrequency

IGBT,Wechselrichter/IGBT,Inverter

HöchstzulässigeWerte/MaximumRatedValues

Kollektor-Emitter-Sperrspannung

Collector-emittervoltage

Kollektor-Dauergleichstrom

ContinuousDCcollectorcurrent

PeriodischerKollektor-Spitzenstrom

Repetitivepeakcollectorcurrent

Gesamt-Verlustleistung

Totalpowerdissipation

Gate-Emitter-Spitzenspannung

Gate-emitterpeakvoltage

= 25°C

= 80°C, T

vj max

= 150°C

= 25°C, T

vj max

= 150°C

= 1 ms

= 25°C, T

vj max

= 150°C

CES

1200

800

1200

1600

7,60

+/-20

min.

= 25°C

= 125°C

CE sat

GEth

Gint

ies

res

CES

GES

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

d on

4,5

typ.

3,20

3,85

5,5

8,40

0,56

52,0

3,40

0,10

0,125

0,09

0,10

0,53

0,59

0,06

0,07

max.

3,70

6,5

5,0

400

µC

Ω

µs

C nom

CRM

tot

GES

CharakteristischeWerte/CharacteristicValues

Kollektor-Emitter-Sättigungsspannung

Collector-emittersaturationvoltage

Gate-Schwellenspannung

Gatethresholdvoltage

Gateladung

Gatecharge

InternerGatewiderstand

Internalgateresistor

Eingangskapazität

Inputcapacitance

Rückwirkungskapazität

Reversetransfercapacitance

Kollektor-Emitter-Reststrom

Collector-emittercut-offcurrent

Gate-Emitter-Reststrom

Gate-emitterleakagecurrent

Einschaltverzögerungszeit,induktiveLast

Turn-ondelaytime,inductiveload

Anstiegszeit,induktiveLast

Risetime,inductiveload

Abschaltverzögerungszeit,induktiveLast

Turn-offdelaytime,inductiveload

Fallzeit,induktiveLast

Falltime,inductiveload

EinschaltverlustenergieproPuls

Turn-onenergylossperpulse

AbschaltverlustenergieproPuls

Turn-offenergylossperpulse

Kurzschlußverhalten

SCdata

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

= 800 A, V

= 15 V

= 800 A, V

= 15 V

= 32,0 mA, V

= V

, T

= 25°C

= -15 V ... +15 V, V

= 600V

= 25°C

f = 1 MHz, T

= 25°C, V

= 25 V, V

= 0 V

f = 1 MHz, T

= 25°C, V

= 25 V, V

= 0 V

= 1200 V, V

= 0 V, T

= 25°C

= 0 V, V

= 20 V, T

= 25°C

= 800 A, V

= 600 V

= ±15 V

Gon

= 1,3

Ω

= 800 A, V

= 600 V

= ±15 V

Gon

= 1,3

Ω

= 800 A, V

= 600 V

= ±15 V

Goff

= 1,3

Ω

= 800 A, V

= 600 V

= ±15 V

Goff

= 1,3

Ω

= 800 A, V

= 600 V, L

= 60 nH

= ±15 V

Gon

= 1,3

Ω

= 800 A, V

= 600 V, L

= 60 nH

= ±15 V

Goff

= 1,3

Ω

≤

15 V, V

= 900 V

CEmax

= V

CES

-L

sCE

·di/dt

proIGBT/perIGBT

d off

76,0

off

thJC

thCH

vj op

-40

58,0

≤

10 µs, T

= 125°C

6000

13,5

16,5 K/kW

K/kW

125

°C

Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT

Thermalresistance,casetoheatsink

Paste

=1W/(m·K)/λ

grease

=1W/(m·K)

TemperaturimSchaltbetrieb

Temperatureunderswitchingconditions

preparedby:WB

approvedby:PL

dateofpublication:2013-11-25

revision:3.2

FZ800R12KS4B2NOSA1 Related Products

	FZ800R12KS4B2NOSA1	FZ800R12KS4_B2
Description	MODULE IGBT A-IHM130-1	Thermal Interface Products Soft PGS - IGBT Mod Infineon
Is it Rohs certified?	incompatible	incompatible
Maker	Infineon	Infineon
package instruction	FLANGE MOUNT, R-XUFM-X7	MODULE-7
Reach Compliance Code	not_compliant	unknown
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	1200 A	1200 A
Collector-emitter maximum voltage	1200 V	1200 V
Configuration	COMPLEX	COMPLEX
JESD-30 code	R-XUFM-X7	R-XUFM-X7
Number of components	2	2
Number of terminals	7	7
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
surface mount	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal off time (toff)	660 ns	660 ns
Nominal on time (ton)	225 ns	225 ns
Base Number Matches	1	1

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