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D45H11J69Z

Description
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CategoryThe transistor   
File Size198KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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D45H11J69Z Overview

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

D45H11J69Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)10 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Base Number Matches1
D45H SERIES
PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE POWER APPLICATION
AND SWITCHING
Low Collector-Emitter Saturation Voltage:
V
CE
(sat) = -1V (MAX)@-8A
Fast Switching Speeds
TO-220
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage : D45H 1,2
: D45H 4,5
: D45H 7,8
: D45H 10,11
Emitter Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
A
=25°C)
Junction Temperature
Storage Temperature
Symbol
V
CEO
Rating
-30
-45
-60
-80
-5
-10
-20
50
1.67
150
-55 ~ 150
Unit
V
V
V
V
V
A
A
W
W
°C
°C
V
EBO
I
C
I
C
P
C
P
C
T
J
T
STG
1.Base 2.Collector 3.Emitter
ELECTRICAL CHARACTERISTICS
(
T
C
=25°C)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
* DC Current Gain : D45H 1,4,7,10
: D45H 2,5,8,11
:
: D45H 1, 4, 7, 10
: D45H 2, 5, 8, 11
* Collector Emitter Saturation Voltage
: D45H 1, 4, 7 10
: D45H 2, 5, 8,11
* Base Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
Symbol
I
CES
I
EBO
h
FE1
h
FE2
V
CE
(sat)
Test Conditions
V
CE
= Rated V
CEO
, V
EB
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 4A
I
C
= - 8A, I
B
= - 0.8A
I
C
= - 8A, I
B
= - 0.4A
I
C
= - 8A, I
B
= - 0.8A
V
CE
= - 10V, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
I
C
= - 5A, I
B1
= - 0.5A
I
B1
= I
B2
= - 0.5A
Min
Typ
Max
-10
-100
35
60
20
40
Unit
µA
µA
-1
-1
-1.5
40
230
135
500
100
V
BE
(sat)
f
T
C
OB
t
ON
t
STG
t
F
V
V
V
MHz
pF
ns
ns
ns
Rev. B.1
©
1999 Fairchild Semiconductor Corporation

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Description Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 10A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 10A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Parts packaging code SFM SFM SFM SFM SFM SFM SFM
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 10 A 10 A 10 A 10 A 10 A 10 A 10 A
Collector-emitter maximum voltage 80 V 30 V 45 V 80 V 60 V 30 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 20 20 20 20 40 40
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 40 MHz 40 MHz 40 MHz 40 MHz 40 MHz 40 MHz 40 MHz
Maker Fairchild - - Fairchild Fairchild Fairchild Fairchild

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