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UF2007-T

Description
2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size71KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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UF2007-T Overview

2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15

UF2007-T Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingMATTE TIN
Terminal locationAXIAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.0750 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current60 A
UF2001 - UF2007
2.0A ULTRA-FAST RECTIFIER
Please click here to visit our online spice models database.
Features
Diffused Junction
Ultra-Fast Switching for High Efficiency
Surge Overload Rating to 60A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
Case: DO-15
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Tin. Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Type Number
Ordering Information: See Page 3
Weight: 0.4 grams (approximate)
DO-15
Dim
A
B
C
D
Min
25.40
5.50
0.686
2.60
Max
7.62
0.889
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
A
= 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage (Note 5)
Reverse Recovery Time (Note 3)
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
θ
JA
T
J,
T
STG
UF
2001
50
35
UF
2002
100
70
UF
2003
200
140
UF
2004
400
280
2.0
60
UF
2005
600
420
UF
2006
800
560
UF
2007
1000
700
Unit
V
V
A
A
@ I
F
= 2.0A
@ T
A
= 25°C
@ T
A
= 100°C
1.0
1.3
5.0
100
50
50
50
-65 to +150
1.7
V
μA
75
30
ns
pF
°C/W
°C
Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Measured at I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
RoHS revision 13.2.2003. High temperature solder exemption applied, see
EU Directive Annex Note 7.
Short duration pulse test used to minimize self heating effect.
DS25007 Rev. 4 - 2
1 of 3
www.diodes.com
UF2001 - UF2007
© Diodes Incorporated

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