BSF024N03LT3 G
OptiMOS
Features
TM
3 Power-MOSFET
Product Summary
V
DS
R
DS(on),max
I
D
30
2.4
106
V
mW
A
• Optimized for high switching frequency DC/DC converter
• Very low on-resistance
R
DS(on)
• Excellent gate charge x
R
DS(on)
product (FOM)
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% avalanche tested
• 100% Rg Tested
• Double-sided cooling
• Pb-free plating; RoHS compliant
CanPAK
TM
S
• Compatible with DirectFET® package ST footprint and outline
1)
• Qualified according to JEDEC
2)
for target applications
Type
BSF024N03LT3 G
Package
MG-WDSON-2
Outline
ST
Marking
0703
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=58 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
106
67
15
400
40
125
±20
Unit
A
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=40 A,
R
GS
=25
W
mJ
V
CanPAK
TM
uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a
registered trademark of International Rectifier Corporation.
2)
3)
4)
J-STD20 and JESD22
See figure 3 for more detailed information
See figure 13 for more detailed information
Rev. 2.1
page 1
2013-10-24
BSF024N03LT3 G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=58 K/W
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
42
2.2
-40 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom
top
Device on PCB
R
thJA
6 cm
2
cooling area
5)
-
-
-
1.0
-
-
3
58
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
Drain-source on-state resistance
Gate resistance
Transconductance
5)
30
1
-
-
-
0.1
-
2.2
10
V
µA
-
-
-
-
0.2
10
10
2.6
2.0
0.5
110
100
100
3.2
2.4
0.8
-
W
S
nA
mW
I
GSS
R
DS(on)
R
DS(on)
R
G
g
fs
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=20 A
V
GS
=10 V,
I
D
=20 A
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
55
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2013-10-24
BSF024N03LT3 G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
11.9
6.6
5.8
11.1
26
2.9
53
-
-
-
-
34
-
71
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=30 A,
R
G,ext
=1.6
W
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
4100
1730
84
5.7
5.6
29
4.8
5500
2300
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
22
36
-
-
nC
I
S
I
S,pulse
V
SD
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
0.81
35
400
1.2
A
V
Reverse recovery charge
6)
Q
rr
-
-
28
nC
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2013-10-24
BSF024N03LT3 G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
50
120
40
80
30
P
tot
[W]
20
40
10
0
0
40
80
120
160
I
D
[A]
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
1 µs
10 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
0.5
10
2
100 µs
10
0
0.2
0.1
Z
thJC
[K/W]
I
D
[A]
10
1
DC
1 ms
10
-1
0.05
0.02
0.01
10 ms
10
0
10
-2
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.1
page 4
2013-10-24
BSF024N03LT3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
400
5V
10 V
4.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
12
320
8
240
R
DS(on)
[mW]
3V
I
D
[A]
4V
3.2 V
3.5 V
160
4
3.5 V
4.5 V
4V
7V
3.2 V
3V
2.8 V
10 V
5V
80
0
0
1
2
3
0
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
160
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
240
140
200
120
160
100
80
g
fs
[S]
150 °C
25 °C
I
D
[A]
120
60
80
40
40
20
0
0
1
2
3
4
5
0
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 2.1
page 5
2013-10-24
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