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CIH02T3N9SNC

Description
FIXED IND 3.9NH 180MA 1.2OHM SMD
CategoryPassive components   
File Size167KB,4 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
Download Datasheet Parametric View All

CIH02T3N9SNC Overview

FIXED IND 3.9NH 180MA 1.2OHM SMD

CIH02T3N9SNC Parametric

Parameter NameAttribute value
typemulti-layer
Material - Core-
inductance3.9nH
Tolerance±0.3nH
Rated current180mA
Current - saturation value-
shieldNo shielding
DC resistance (DCR)1.2 ohms max
Q value at different frequencies2 @ 100MHz
Frequency - Self-resonance6GHz
grade-
Operating temperature-55°C ~ 125°C
Inductor Frequency - Test100MHz
characteristic-
Installation typesurface mount
Package/casing01005 (0402 Metric)
Supplier device packaging01005 (0402 Metric)
size/dimensions0.016" long x 0.008" wide (0.40mm x 0.20mm)
Height - Installation (maximum)0.009" (0.22mm)
Ver. 201308
Multilayer High Frequency Inductor
CIH02T Series (0402/ EIA 01005)
APPLICATION
Mobile communication systems, noise suppression
at high frequency and Impedance matching.
FEATURES
High Q value in high frequency range
Small size(0.4×0.2×0.2)
Monolithic structure for high reliability
Do not contain lead and support lead-free soldering.
RoHS compliant
DIMENSION
Type
Dimension [mm]
L
W
t
d
02
0.4±0.02
0.2±0.02
0.2±0.02
0.1±0.04
DESCRIPTION
Q Typical Frequency[Hz]
1.8G
23
23
24
24
26
26
27
22
22
23
24
24
22
22
22
23
23
22
21
Part No.
CIH02T0N2
CIH02T0N3
CIH02T0N4
CIH02T0N5
CIH02T0N6
CIH02T0N7
CIH02T0N8
CIH02T0N9
CIH02T1N0
CIH02T1N1
CIH02T1N2
CIH02T1N3
CIH02T1N4
CIH02T1N5
CIH02T1N6
CIH02T1N7
CIH02T1N8
CIH02T1N9
CIH02T2N0
Inductance
(nH)@100MHz
0.2nH±0.1nH,0.2nH
0.3nH±0.1nH,0.2nH
0.4nH±0.1nH,0.2nH
0.5nH±0.1nH,0.2nH
0.6nH±0.1nH,0.2nH
0.7nH±0.1nH,0.2nH
0.8nH±0.1nH,0.2nH
0.9nH±0.1nH,0.2nH
1.0nH±0.1nH,0.2nH,0.3nH
1.1nH±0.1nH,0.2nH,0.3nH
1.2nH±0.1nH,0.2nH,0.3nH
1.3nH±0.1nH,0.2nH,0.3nH
1.4nH±0.1nH,0.2nH,0.3nH
1.5nH±0.1nH,0.2nH,0.3nH
1.6nH±0.1nH,0.2nH,0.3nH
1.7nH±0.1nH,0.2nH,0.3nH
1.8nH±0.1nH,0.2nH,0.3nH
1.9nH±0.1nH,0.2nH,0.3nH
2.0nH±0.1nH,0.2nH,0.3nH
Q(Min.)
DC
[Ω]max.
0.1
0.2
0.2
0.2
0.3
0.4
0.4
0.4
0.4
0.5
0.5
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
Rated
(mA)max.
350
350
350
350
320
320
320
320
250
250
250
250
250
220
220
200
200
200
200
SRF
[GHz]
min.
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
9.0
9.0
100MHz
500M 800M
-
-
-
-
-
-
-
-
2
2
2
2
2
2
2
2
2
2
2
11
11
12
12
12
12
12
11
11
11
11
11
10
10
10
10
11
10
10
13
13
14
14
15
15
14
13
13
14
14
14
13
13
13
13
14
14
13
Resistance current
2.0G
24
24
25
25
27
27
28
23
23
24
25
25
23
23
23
24
25
24
23
2.4G
27
27
29
29
31
31
32
27
27
28
29
29
26
26
26
27
28
26
25
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