SPICE MODELS: DDTD113EU DDTD123EU DDTD143EU DDTD114EU DDTD122JU DDTD113ZU
DDTD123YU DDTD133HU DDTD123TU DDTD143TU DDTD114TU DDTD114GU
DDTD
(xxxx)
U
NPN PRE-BIASED 500 mA SOT-323
SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
·
·
·
·
Epitaxial Planar Die Construction
Complementary PNP Types Available (DDTB)
Built-In Biasing Resistors, R1, R2
Available in Lead Free/RoHS Compliant Version (Note 2)
IN
2
A
3 OUT
SOT-323
B C
1 GND
G
H
K
M
Dim
A
B
C
D
E
G
H
J
K
L
M
a
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
0°
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
Mechanical Data
·
·
·
·
·
·
·
·
Case: SOT-323
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 3
Marking: Date Code and Marking Code (See Diagrams &
Page 3)
Ordering Information (See Page 3)
Weight: 0.006 grams (approximate)
0.65 Nominal
J
D
F
L
(2) IN
R
1
R
2
OUT (3)
All Dimensions in mm
P/N
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
R1 (NOM) R2 (NOM) MARKING
1K
2.2K
4.7K
10K
0.22K
1K
2.2K
3.3K
2.2K
4.7K
10K
0
1K
2.2K
4.7K
10K
4.7K
10K
10K
10K
OPEN
OPEN
OPEN
10K
N60
N61
N62
N63
N64
N65
N66
N67
N69
N70
N71
N72
GND (1)
Maximum Ratings
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
All
Value
50
-10 to +10
-10 to +12
-10 to +30
-10 to +40
-5 to +5
-5 to +10
-5 to +12
-6 to +20
5
500
200
625
-55 to +150
Unit
V
Characteristic
V
IN
V
Input Voltage, (1) to (2)
V
EBO (MAX)
I
C
P
d
R
qJA
T
j
, T
STG
V
mA
mW
°C/W
°C
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30382 Rev. 3 - 2
1 of 3
www.diodes.com
DDTD (xxxx) U
ã
Diodes Incorporated
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Symbol
Min
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.3
Typ
Max
Unit
R1, R2 Types
Test Condition
NEW PRODUCT
Characteristic
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Output Voltage
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
V
l(off)
¾
¾
V
V
CC
= 5V, I
O
= 100mA
Input Voltage
V
l(on)
¾
¾
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
0.3V
7.2
3.8
1.8
0.88
28
7.2
3.6
2.4
0.5
V
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 10mA
V
O
= 0.3V, I
O
= 30mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
I
O
/I
l
= 50mA/2.5mA
V
O(on)
¾
¾
V
Input Current
I
l
¾
¾
mA
V
I
= 5V
Output Current
I
O(off)
¾
33
39
47
56
47
56
56
56
¾
¾
mA
V
CC
= 50V, V
I
= 0V
DC Current Gain
G
l
¾
¾
¾
V
O
= 5V, I
O
= 50mA
Gain-Bandwidth Product*
* Transistor - For Reference Only
f
T
200
¾
MHz
V
CE
= 10V, I
E
= 5mA,
f = 100MHz
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
Min
50
40
5
¾
¾
¾
¾
300
¾
100
100
100
56
¾
Typ
¾
¾
¾
¾
¾
¾
250
250
250
¾
200
Max
¾
¾
¾
0.5
0.5
0.5
0.5
580
0.3
600
600
600
¾
¾
R1-Only, R2-Only Types
Unit
V
V
V
mA
mA
V
¾
I
C
= 50mA
I
C
= 1mA
I
E
= 50mA
I
E
= 50mA
I
E
= 50mA
I
E
= 720mA
V
CB
= 50V
V
EB
= 4V
I
C
= 50mA, I
B
= 2.5mA
I
C
= 5mA, V
CE
= 5V
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
Test Condition
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
Collector Cutoff Current
Emitter Cutoff Current
I
EBO
V
CE(sat)
h
FE
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
f
T
MHz
DS30382 Rev. 3 - 2
2 of 3
www.diodes.com
DDTD (xxxx) U
Ordering Information
(Note 3)
Packaging
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
NEW PRODUCT
Device
DDTD113EU-7
DDTD123EU-7
DDTD143EU-7
DDTD114EU-7
DDTD122JU-7
DDTD113ZU-7
DDTD123YU-7
DDTD133HU-7
DDTD123TU-7
DDTD143TU-7
DDTD114TU-7
DDTD114GU-7
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: DDTD114GU-7-F.
Marking Information
XXX = Product Type Marking Code
See Sheet 1 Diagrams
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2005
S
May
5
Jun
6
Jul
7
2006
T
Aug
8
2007
U
Sep
9
2008
V
Oct
O
Nov
N
2009
W
Dec
D
XXX
Date Code Key
Year
Code
Month
Code
Jan
1
2002
N
Feb
2
2003
P
March
3
2004
R
Apr
4
DS30382 Rev. 3 - 2
3 of 3
www.diodes.com
YM
DDTD (xxxx) U
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