MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
BCR25A, BCR25B
OUTLINE DRAWING
17
Dimensions
in mm
(19.6)
φ3.3
MIN
φ1.3
MIN
3
3
1
8.0
3
29 MAX
3.7 MIN
1
3
(φ14)
1.9 MAX 15.5 MAX
2
M6×1.0
1
T
1
TERMINAL
BCR25A
2
T
2
TERMINAL
3
GATE TERMINAL
39 MAX
30±0.2
•
•
•
•
I
T (RMS)
...................................................................... 25A
V
DRM
..............................................................400V/500V
I
FGT
!
, I
RGT
#
........................................................50mA
I
RGT
!
..................................................................... 75mA
2-φ4.2 MIN
φ3.3
MIN
φ1.3
MIN
3
26 MAX
13 MAX
37 MAX
2
8.0
1
8.5
16 MAX
28.5 MAX
2.5 MAX
APPLICATION
Contactless AC switches, light dimmer,
on/off control of copier lamps
3
φ14.2
MAX
BCR25B
2
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
600
10
500
600
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
I
T
stg
—
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mounting torque
Weight
BCR25A only
BCR25A (Typical value)
BCR25B (Typical value)
Conditions
Commercial frequency, sine full wave, 360° conduction, T
c
=92°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
25
250
262
5.0
0.5
10
2.0
–20 ~ +125
–20 ~ +125
30
2.94
18
23
37 MAX
3
Unit
A
A
A
2
s
W
W
V
A
°C
°C
kg·cm
N·m
g
V1.
Gate open.
Feb.1999
8.5
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Gate trigger
current
V2
Gate trigger voltage
V2
Parameter
Repetitive peak off-state current
On-state voltage
!
@
#
!
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to case
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=40A, Instantaneous measurement
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
V3
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
5.0
1.6
3.0
3.0
3.0
50
75
50
—
1.0
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
V2.
Measurement using the gate trigger characteristics measurement circuit.
V3.
The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Voltage
class
V
DRM
(V)
(dv/dt)
c
Symbol
R
Min.
—
1. Junction temperature
T
j
=125°C
L
20
V/µs
R
—
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=–13.5A/ms
3. Peak off-state voltage
V
D
=400V
L
20
Unit
Test conditions
Commutating voltage and current waveforms
(inductive load)
8
400
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
10
500
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
320
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
10
3
7 T
C
= 25°C
5
3
2
10
2
7
5
3
2
280
240
200
160
120
80
40
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
10
1
7
5
3
2
10
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE CHARACTERISTICS
3
2 V
GM
= 10V
GATE VOLTAGE (V)
10
1
7
5 V
GT
= 3.0V
3
2
10
0
7
5
3
2
10
–1
P
GM
= 5.0W
I
GM
= 2A
GATE TRIGGER • CURRENT VOLTAGE (T
j
= t°C)
GATE TRIGGER • CURRENT VOLTAGE (T
j
= 25°C)
P
G(AV)
= 0.5W
GATE TRIGGER CURRENT·VOLTAGE VS.
JUNCTION TEMPERATURE
200
TEST PROCEDURE
Ι, ΙΙ
AND
ΙΙΙ
180
160
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT
GATE TRIGGER VOLTAGE
7
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
I
FGT I
I
RGT I
I
RGT III
V
GD
= 0.2V
100 (%)
TRANSIENT THERMAL IMPEDANCE (°C/W)
ON-STATE POWER DISSIPATION (W)
10
2
2 3 5 7 10
3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
50
45
40 360°
35 CONDUCTION
RESISTIVE,
30 INDUCTIVE
25 LOADS
20
15
10
5
0
0
5
10
15
20
25
30
35
40
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
CASE TEMPERATURE (°C)
CURVES APPLY REGARDLESS
140 OF CONDUCTION ANGLE
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
4
8 12
0
160
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR25A)
160
NATURAL CONVECTION
140 ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
120
100 100 t3.0
100
80
60
40
WITHOUT
20 MICA PLATE
WITH GREASE
0
4
8 12 16
0
120 120 t3.0
B
X
20-06
16
20
24
28
32
20
24
28
32
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
AMBIENT TEMPERATURE (°C)
100
80
60
40
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR25B)
160
NATURAL CONVECTION
140 ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
120
100 100 t3.0
120 120 t3.0
160 160 t4.0
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
160
140
120
100
80
60
40
20
0
0
20
40
60
TYPICAL EXAMPLE
III QUADRANT
I QUADRANT
WITHOUT
20 MICA PLATE
WITH GREASE
0
4
8 12 16
0
20
24
28
32
80 100 120 140 160
RMS ON-STATE CURRENT (A)
JUNCTION TEMPERATURE (°C)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
VOLTAGE WAVEFORM
3 TYPICAL
t
2 EXAMPLE
(dv/dt)
C
V
D
T
j
= 125°C
10
2
I
T
= 4A,
τ
= 500µs
CURRENT WAVEFORM
7
5 V
D
= 200V, f = 3Hz
(di/dt)
C
I
T
3
τ
t
2
10
1
7
5
3
2
III QUADRANT
10
0
7 I QUADRANT
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
6Ω
3 TYPICAL
A
2 EXAMPLE
T
j
= 25°C
10
3
6V
7
5
I
RGT III
3
I
RGT I
2
I
FGT I
10
2
7
5
3
2
P.C
t
w
0.1s
10
1
7
5
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
TEST PROCEDURE
3
Feb.1999
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