16M0V datasheet, PDF - EEWORLD Datasheet

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16M0V: Description60V 300mA MONOLITHIC DIODE ARRAY; CategoryDiscrete semiconductor diode; File Size15KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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16M0V Overview

60V 300mA MONOLITHIC DIODE ARRAY

16M0V Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	DIE
package instruction	R-XUUC-N11
Contacts	1
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	COMPLEX
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-XUUC-N11
JESD-609 code	e0
Number of components	16
Number of terminals	11
Maximum output current	0.3 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum reverse recovery time	0.02 µs
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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16M0

A Microsemi Company

580 Pleasant St.

Watertown, MA 02472

Phone: 617-924-9280

Fax: 617-924-1235

DIE SPECIFICATION

60V 300mA

MONOLITHIC DIODE ARRAY

FEATURES:

•

16 DIODE CORE DRIVER

trr < 20 ns

RUGGED AIR-ISOLATED CONSTRUCTION

LOW REVERSE LEAKAGE CURRENT

.054"

Absolute Maximum Ratings:

Symbol

Parameter

Limit

300

500

-65 to +150

-65 to +200

Unit

Vdc

mAdc

°C

VBR(R) *1 *2 Reverse Breakdown Voltage

Continuous Forward Current

IFSM

*1 Peak Surge Current (tp= 1/120 s)

Top

Operating Junction Temperature Range

Tstg

Storage Temperature Range

NOTE 1: Each Diode

NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%

.060"

Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified

Symbol Parameter

Conditions

Min

1.5

0.1

8.0

Vdc

uAdc

Max

Unit

BV1

Breakdown Voltage

IR = 10uAdc

Vf1

Forward Voltage

IF = 100mAdc *1

Vf2

Forward Voltage

IF = 500mAdc *1

IR1

Reverse Current

VR = 40 Vdc

Capacitance (pin to pin)

VR = 0 Vdc; f = 1 MHz

tfr

Forward Recovery Time IF = 500mAdc

trr

Reverse Recovery Time IF = IR = 200mAdc, irr = 20 mAdc, RL = 100 ohms

NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge

Packaging Options:

W: Wafer (100% probed) U: Wafer (sample probed)

D: Chip (Waffle Pack)

B: Chip (Vial)

V: Chip (Waffle Pack, 100% visually inspected) X: Other

Metallization Options:

Standard: Al Top

/ Au Backside (No Dash #)

Processing Options:

Standard: Capable of JANTXV application (No Suffix)

Suffix C: Commercial

Suffix S: Capable of S-Level equivalent applications

ORDERING INFORMATION

PART #: 16M0_ _- _

First Suffix Letter: Packaging Option

Second Suffix Letter: Processing Option

Dash #: Metallization Option

Sertech reserves the right to make changes to any product design, specification or other information at any time without prior

notice.

MSC1024.PDF Rev - 12/3/98

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