TYP 212 --->TYP 2012
SCR FOR OVERVOLTAGE PROTECTION
.
.
.
FEATURES
HIGH SURGE CURRENT CAPABILITY
HIGH dI/dt RATING
HIGH STABILITY AND RELIABILITY
DESCRIPTION
The TYP 212 ---> 1012 Family uses high perform-
ance glass passivated chips technology.
These Silicon Controlled Rectifiers are designed for
overvoltage protection in crowbar circuits applica-
tion.
K
AG
TO220AB
(Plastic)
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
Parameter
RMS on-state current
(180° conduction angle, single phase circuit)
Average on-state current
(180° conduction angle, single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2 t value
Non repetitive surge peak on-state current
( Tj initial = 25°C )
Exponential pulse wave form
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Tc = 110
°C
Tc = 110
°C
tp = 8.3 ms
tp = 10 ms
I2t
ITM
tp = 10 ms
tp = 1 ms
Value
12
8
315
300
450
750
A2s
A
Unit
A
A
A
dI/dt
100
A/µs
°C
°C
°C
Tstg
Tj
Tl
- 40 to + 150
- 40 to + 125
260
Symbol
Parameter
212
512
50
TYP
1012
100
2012
200
Unit
VDRM
VRRM
April 1995
Repetitive peak off-state voltage
Tj = 125
°C
25
V
1/5
TYP 212 ---> TYP 2012
THERMAL RESISTANCES
Symbol
Rth (j-a)
Junction to ambient
Parameter
Value
60
1.3
Unit
°C/W
°C/W
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS
(maximum values)
PG (AV) = 1W
PGM = 10W (tp = 20
µs)
IFGM = 4A (tp = 20
µs)
VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol
IGT
VGT
VGD
tgt
IL
IH
VTM
IDRM
IRRM
dV/dt
tq
VD=12V
VD=12V
Test Conditions
(DC) RL=33Ω
(DC) RL=33Ω
Tj=25°C
Tj=25°C
Tj= 125°C
Tj=25°C
Tj=25°C
gate open
Tj=25°C
Tj=25°C
Tj=25°C
Tj= 125°C
Tj= 125°C
Tj= 125°C
MIN
TYP
MAX
MAX
MIN
TYP
TYP
MAX
MAX
MAX
Value
30
1.5
0.2
1
60
50
1.5
0.01
2
200
100
V/µs
µs
Unit
mA
V
V
µs
mA
mA
V
mA
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 200mA
dIG/dt = 1.5A/µs
IG= 1.2 IGT
IT= 500mA
ITM= 50A tp= 380µs
VDRM
VRRM
Rated
Rated
Linear slope up to VD=67%VDRM
gate open
VD=67%VDRM ITM = 50A VR= 25V
dITM/dt=30 A/µs
dVD/dt= 50V/µs
2/5
TYP 212 ---> TYP 2012
Fig.1 :
Maximum average power dissipation versus
average on-state current.
Fig.2 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact.
Fig.3 :
Average
temperature.
on-state
current
versus
case
Fig.4 :
Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1
Zt h( j-c)
0.1
Zt h( j-a)
tp (s)
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
Fig.5 :
Relative variation of gate trigger current versus
junction temperature.
Fig.6 :
Non repetitive surge peak on-state current
versus number of cycles.
3/5
TYP 212 ---> TYP 2012
Fig.7 :
Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
≤
10 ms, and
corresponding value of I2t.
Fig.8 :
On-state characteristics (maximum values).
Fig.9 :
Peak capacitor discharge current versus pulse
width.
Fig.10 :
Allowable peak capacitor discharge current
versus initial junction temparature.
4/5
TYP 212 ---> TYP 2012
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
A
H
G
I
J
D
B
F
P
O
L
C
M
= N=
A
B
C
D
F
G
H
I
J
L
M
N
O
P
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
10.00 10.40 0.393 0.409
15.20 15.90 0.598 0.625
13.00 14.00 0.511 0.551
6.20
6.60 0.244 0.259
3.50
4.20 0.137 0.165
2.65
2.95 0.104 0.116
4.40
4.60 0.173 0.181
3.75
3.85 0.147 0.151
1.23
1.32 0.048 0.051
0.49
0.70 0.019 0.027
2.40
2.72 0.094 0.107
4.80
5.40 0.188 0.212
1.14
1.70 0.044 0.066
0.61
0.88 0.024 0.034
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
©
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
Renesas Electronics MCUs
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