®
TYN210 ---> TYN1010
SCR
A
FEATURES
High surge capability
High on-state current
High stability and reliability
s
s
s
G
K
DESCRIPTION
The TYN210 ---> TYN1010 Family of Silicon
Controlled Rectifiers uses a high performance
glass passivated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
K
A
G
TO-220AB
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current (180° conduction angle)
Average on-state current
(180° conduction angle, single phase circuit)
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I
2
t value
Critical rate of rise of on-state current
Gate supply: I
G
= 100mA dI
G
/dt = 1A/µs
Storage and operating junction temperature range
Maximum lead soldering temperature during 10s at 4.5mm from case
Tc = 100°C
Tc = 100°C
tp = 8.3ms
tp = 10ms
tp = 10ms
Value
10
6.4
105
100
50
50
-40 to +150
-40 to +125
260
A
2
s
A/µs
°C
°C
Unit
A
A
A
TYN
Symbol
V
DRM
V
RRM
Parameter
210
Repetitive peak off-state voltage
Tj = 125°C
200
410
400
610
600
810
800
1010
1000
V
Unit
September 2001 - Ed: 1A
1/4
TYN210 ---> TYN1010
THERMAL RESISTANCE
Symbol
Rth (j-a)
Rth (j-c) DC
Junction to ambient
Junction to case for DC
Parameter
Value
60
2.5
Unit
°C/W
°C/W
GATE CHARACTERISTICS
(maximum values)
P
G(AV)
= 1W P
GM
= 10W (tp = 20µs) I
FGM
= 4A (tp = 20µs) V
RGM
= 5V
ELECTRICAL CHARACTERISTICS
Symbol
I
GT
V
GT
V
GD
tgt
I
L
I
H
V
TM
I
DRM
I
RRM
dV/dt
tq
V
D
= 12V (DC)
V
D
= 12V (DC)
V
D
= V
DRM
R
L
= 33Ω
R
L
= 33Ω
R
L
= 3.3kΩ
Test conditions
Tj = 25°C
Tj = 25°C
Tj =110°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 110°C
Linear slope up to
V
D
= 67% V
DRM
gate open
V
D
=67%V
DRM
I
TM
= 20A V
R
= 25V
dI
TM
/dt=30 A/µs dV
D
/dt= 50V/µs
Tj = 110°C
Tj = 110°C
MAX.
MAX.
MIN.
TYP.
TYP.
MAX.
MAX.
MAX.
MAX.
MIN.
TYP.
Value
15
1.5
0.2
2
50
30
1.6
0.01
2
200
70
V/µs
µs
Unit
mA
V
V
µs
mA
mA
V
mA
V
D
= V
DRM
I
G
= 40mA
dI
G
/dt = 0.5A/µs
I
G
= 1.2I
GT
I
T
= 100mA Gate open
I
TM
= 20A
V
DRM
rated
V
RRM
rated
tp = 380µs
Fig. 1:
Maximum average power dissipation ver-
sus average on-state current.
Fig. 2:
Correlation between maximum average
power dissipation and maximum allowable temper-
atures (Tamb and Tcase) for different thermal
resistances heatsink + contact.
P (W)
Tcase (
o
C)
Rth = 0
o
C/W
2
o
C/W
4
o
C/W
6
o
C/W
P (W)
12
360
O
12
10
DC
10
8
= 180
o
-100
-105
-110
8
6
= 180
o
6
= 120
o
4
= 60
o
= 90
o
4
2
Tamb ( C)
o
-115
-120
-125
140
2
= 30
o
IT(AV)(A)
0
0
1
2
3
4
5
6
7
8
9
0
0
20
40
60
80
100
120
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TYN210 ---> TYN1010
Fig. 3:
Average on-state current versus case tem-
perature.
I T(AV) (A)
Fig. 4:
Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
12
DC
10
8
6
4
2
Tcase ( C)
o
o
Zth(j-c)
0.1
= 180
Zth(j-a)
tp(s)
0
0
10
20
30
40
50
60
70
80
90 100 110 120 130
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig. 5:
Relative variation of gate trigger current
versus junction temperature.
Fig. 6:
Non repetitive surge peak on-state current
versus number of cycles.
Fig. 7:
Non repetitive surge peak on-state current
for a sinusoidal pulse with width: t
≤
10ms, and cor-
responding value of I
2
t.
Fig. 8:
On-state characteristics (maximum values).
3/4
TYN210 ---> TYN1010
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
DIMENSIONS
REF.
B
C
Millimeters
15.20
3.75
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
2.65
1.14
1.14
2.60
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
2.95 0.104
1.70 0.044
1.70 0.044
15.90 0.598
Inches
0.625
0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
0.116
0.066
0.066
0.102
Min. Typ. Max. Min. Typ. Max.
A
a1
a2
F
b2
L
I
A
B
b1
b2
C
c1
c2
e
F
I
I4
L
l4
a1
c2
l3
l2
a2
15.80 16.40 16.80 0.622 0.646 0.661
b1
e
M
c1
l2
l3
M
OTHER INFORMATION
Ordering type
TYNxx10
s
s
s
s
Marking
TYNxx10
Package
TO-220AB
Weight
2.3 g
Base qty
250
Delivery mode
Bulk
Epoxy meets UL94,V0
Cooling method: C
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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