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301U80

Description
DIODE GEN PURP 800V 330A DO205AB
CategoryDiscrete semiconductor    diode   
File Size93KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

301U80 Overview

DIODE GEN PURP 800V 330A DO205AB

301U80 Parametric

Parameter NameAttribute value
package instructionO-MUPM-H1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH SURGE CAPABILITY
applicationHIGH VOLTAGE HIGH POWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.62 V
JEDEC-95 codeDO-205AB
JESD-30 codeO-MUPM-H1
Maximum non-repetitive peak forward current8640 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature200 °C
Maximum output current330 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Base Number Matches1
Bulletin I2032 rev. A 12/94
301U(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
Wide current range
High voltage ratings up to 2500V
High surge current capabilities
Stud cathode and stud anode version
300A
TypicalApplications
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
Major Ratings and Characteristics
301U(R)
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
T
J
80 to 200
330
120
520
8250
8640
340
311
800 to 2000
- 40 to 180
250
300
120
470
6050
6335
183
167
2500
- 40 to 180
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
°C
case style
DO-205AB (DO-9)
www.irf.com
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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