AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
General Description
The AOD8N25 & AOI8N25 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.These parts are ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
300V@150℃
8A
< 0.56Ω
100% UIS Tested!
100% R
g
Tested!
TO252
DPAK
Top View
Bottom View
D
D
Top View
TO251A
IPAK
Bottom View
D
S
S
G
AOD8N25
G
G
D
S
S
AOI8N25
G
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Avalanche Current
C
H
C
Maximum
250
±30
8
5
16
2.1
132
5
78
0.63
-50 to 150
300
Units
V
V
A
A
mJ
V/ns
W
W/
o
C
°
C
°
C
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AS
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,G
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
Symbol
R
θJA
R
θCS
R
θJC
Typical
45
-
1.3
Maximum
55
0.5
1.6
Units
°
C/W
°
C/W
°
C/W
Rev 1: Feb 2012
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Page 1 of 6
AOD8N25/AOI8N25
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
STATIC PARAMETERS
BV
DSS
BV
DSS
/∆TJ
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
306
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
1.7
51
3.2
3.4
6.0
V
GS
=10V, V
DS
=200V, I
D
=1.5A
2.0
1.5
14
V
GS
=10V, V
DS
=125V, I
D
=1.5A,
R
G
=25Ω
I
F
=1.5A,dI/dt=100A/µs,V
DS
=100V
12
23
12
77
0.29
5.1
7.2
I
D
=250µA, V
GS
=0V, T
J
=25°
C
I
D
=250µA, V
GS
=0V, T
J
=150°
C
ID=250µA, VGS=0V
V
DS
=250V, V
GS
=0V
V
DS
=200V, T
J
=125°
C
V
DS
=0V, V
GS
=±30V
V
DS
=5V, I
D
=250µA
V
GS
=10V, I
D
=1.5A
V
DS
=40V, I
D
=1.5A
I
S
=1A,V
GS
=0V
3.1
3.7
0.46
5
0.77
1
8
16
250
300
0.25
1
10
±100
4.3
0.56
V
V/
o
C
µA
nΑ
V
Ω
S
V
A
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
µC
Parameter
Conditions
Min
Typ
Max
Units
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=1.5A,dI/dt=100A/µs,V
DS
=100V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C.
G.These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. L=60mH, I
AS
=2.1A, V
DD
=150V, R
G
=10Ω, Starting T
J
=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Feb 2012
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Page 2 of 6
AOD8N25/AOI8N25
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10V
8
6.5V
100
V
DS
=40V
-55°C
10
6
I
D
(A)
6V
I
D
(A)
125°C
1
25°C
V
GS
=5V
0
0
10
15
20
V
DS
(Volts)
Fig 1: On-Region Characteristics
5
25
0.1
2
6
8
V
GS
(Volts)
Figure 2: Transfer Characteristics
4
10
4
5.5V
2
1.5
Normalized On-Resistance
3
2.5
2
1.5
1
0.5
0
0
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
2
4
-100
50
100
150
200
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
-50
0
1.2
R
DS(ON)
(Ω)
Ω
V
GS
=10V
V
GS
=10V
I
D
=1.5A
0.9
0.6
0.3
0.0
1.2
I
D
=30A
BV
DSS
(Normalized)
1.1
1E+01
1E+00
40
125°C
25°C
1E-01
1
125°
I
S
(A)
1E-02
0.9
25°
1E-03
0.8
-100
50
100
150
200
T
J
(
o
C)
Figure 5: Break Down vs. Junction Temperature
-50
0
1E-04
0.2
0.6
0.8
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.4
1.0
Rev 1: Feb 2012
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Page 3 of 6
AOD8N25/AOI8N25
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=200V
I
D
=1.5A
Capacitance (pF)
100
1000
C
iss
12
V
GS
(Volts)
C
oss
9
6
10
C
rss
3
0
0
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
10
1
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
100
800
T
J(Max)
=150°C
T
C
=25°C
10
I
D
(Amps)
100µs
DC
1ms
10ms
Power (W)
1000
R
DS(ON)
limited
10µs
600
1
400
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
200
0
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.6°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
P
D
T
on
T
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Feb 2012
www.aosmd.com
Page 4 of 6
AOD8N25/AOI8N25
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
75
60
45
30
15
0
0
25
75
100
125
T
CASE
(°
C)
Figure 12: Power De-rating (Note B)
50
150
Current rating I
D
(A)
10.0
Power Dissipation (W)
8.0
6.0
4.0
2.0
0.0
0
75
100
125
T
CASE
(°
C)
Figure 13: Current De-rating (Note B)
25
50
150
400
T
J(Max)
=150°C
T
A
=25°C
300
Power (W)
200
100
0
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
T
on
T
Rev 1: Feb 2012
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Page 5 of 6
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