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DLE30C-KC9

Description
DIODE GEN PURP 200V 3A AXIAL
Categorysemiconductor    Discrete semiconductor   
File Size71KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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DLE30C-KC9 Overview

DIODE GEN PURP 200V 3A AXIAL

DLE30C-KC9 Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)200V
Current - average rectification (Io)3A
Voltage at different If - Forward (Vf980mV @ 3A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)35ns
Current at different Vr - Reverse leakage current10µA @ 400V
Capacitance at different Vr, F-
Installation typeThrough hole
Package/casingDO-201AD, axial
Supplier device packagingAxial
Operating Temperature - Junction150°C (maximum)

DLE30C-KC9 Related Products

DLE30C-KC9 DLE30E
Description DIODE GEN PURP 200V 3A AXIAL DIODE GEN PURP 400V 3A AXIAL
Diode type standard RECTIFIER DIODE

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