Ordering number : ENA0150
DS135A
SANYO Semiconductors
DATA SHEET
DS135A
Features
•
•
•
Diffused Junction Type Silicon Diode
1.0A Power Rectifier
Plastic molded structure.
Peak reverse voltage : VRM= -
-100 to -
-400V.
Average output current : IO=1.0A.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Ta=60°C
50Hz sine wave, 1cycle
Conditions
DS135AE
--100
1.0
45
150
--40 to +150
DS135AD
--200
DS135AC
--400
Unit
V
A
A
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Forward Voltage
Reverse Current
Symbol
VF
IR
Conditions
IF=1.0A
VR : At each VRM
Ratings
min
typ
max
1.0
--10
Unit
V
µA
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71107RC TI IM TB-00001905 No. A0150-1/3
DS135A
Package Dimensions
unit : mm (typ)
7808-001
Cathode mark
2.5
27.0MIN
0.8
5.2MAX
27.0MIN
1.2
IO -- Ta
Resistive, inductive load
2
IF -- VF
Average Output Current, IO -- A
1.0
10
Forward Current, IF -- A
3
2
50
°
C
0
0.5
0.8
Capacitive
load
L=58mm
20mm
10mm
7
5
0.6
L=58mm
20mm
1.0
7
5
3
2
0.4
10mm
0.2
L1
0
0
20
40
60
80
100
120
140
160
L=L1+L2
L2
0.1
1.0
1.5
2.0
2.5
IT10343
Ambient Temperature, Ta --
°C
50
IT10342
IFSM -- n
Surge Foward Current, IFSM -- A
40
30
50
Hz
20
10
0
1.0
2
3
5
7
10
2
3
5
Number of Cycles, n
7 100
IT10344
Ta=
1
Forward Voltage, VF -- V
25
°
C
No. A0150-2/3
DS135A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of July, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0150-3/3
京公网安备 11010802033920号
EEWORLD
