2N4957UB
Surface Mount PNP Silicon
VHF-UHF Amplifier Transistors
Qualified per MIL-PRF-19500/426
DESCRIPTION
The 2N4957UB is a military qualified silicon PNP amplifier transistor designed for VHF-UHF
equipment and other high-reliability applications. Common applications include high gain low
noise amplifier; oscillator, and mixer applications. It is also available in a low-profile TO-72
leaded package.
Compliant
Qualified Levels:
JAN, JANTX,
and JANTXV
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
JEDEC registered 2N4957
JAN, JANTX, and JANTXV military qualified versions are available per MIL-PRF-19500/426
(See
part nomenclature
for all available options)
RoHS compliant
UB Package
Also available in:
TO-72 Package
(leaded top hat)
2N4957
APPLICATIONS / BENEFITS
•
•
Low-power, ultra-high frequency transistor
Leaded metal TO-72 package
MAXIMUM RATINGS
@
T
A
= +25
o
C
Parameters/Test Conditions
Junction and Storage Temperature
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
(1)
Total Power Dissipation
Collector Current
Notes:
1. Derate linearly 1.14 mW/°C for T
A
> +25 °C
Symbol
T
J
and T
STG
V
CEO
V
CBO
V
EBO
P
T
I
C
Value
-65 to +200
-30
-30
-3
200
-30
Unit
C
V
V
V
mW
mA
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0313-1, Rev. 1 (10/8/13)
©2013 Microsemi Corporation
Page 1 of 4
2N4957UB
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Ceramic
TERMINALS: Gold plating over nickel underplate
MARKING: Part number, date code, manufacturer’s ID
POLARITY: PNP, see case outline on last page
TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities
WEIGHT: < 0.04 grams
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN=JAN level
JANTX=JAN level
JANTXV=JANTXV level
Blank = Commercial
JEDEC type number
(See
Electrical Characteristics
table)
2N4957
UB
Surface Mount package
Symbol
I
B
I
C
I
E
T
A
T
C
V
CB
V
CBO
V
CEO
V
EB
V
EBO
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Emitter current: The value of the dc current into the emitter terminal.
Ambient temperature: The air temperature measured below a device, in an environment of substantially uniform
temperature, cooled only by natural air convection and not materially affected by reflective and radiant surfaces.
Case temperature: The temperature measured at a specified location on the case of a device.
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
Emitter-base voltage: The dc voltage between the emitter and the base.
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
T4-LDS-0313-1, Rev. 1 (10/8/13)
©2013 Microsemi Corporation
Page 2 of 4
2N4957UB
ELECTRICAL CHARACTERISTICS
@
T
C
= +25
o
C
OFF CHARACTERISTICS
Test Conditions
Collector-Emitter Breakdown Voltage
I
C
= -1.0 mA, I
B
= 0, Bias condition D
Collector to Base Cutoff Current
V
CB
= -20 V, I
E
= 0, Bias condition D
V
CB
= -30 V, Bias condition D
Emitter to Base Cutoff Current
V
EB
= -3 V, Bias condition D
Symbol
V
(BR)CEO
Value
Min.
-30
Max.
-
Unit
V
nA
µA
µA
I
CBO
I
EBO
-
-
-100
-100
-100
ON CHARACTERISTICS
Test Conditions
Forward Current transfer ratio
I
C
= -0.5 mA, V
CE
= -10 V
I
C
= -2.0 mA, V
CE
= -10 V
I
C
= -5.0 mA, V
CE
= -10 V
I
C
= -5.0 mA, V
CE
= -10 V, T
A
= -55 ºC
Symbol
Value
Min.
15
20
30
10
Max.
Unit
h
FE
165
DYNAMIC CHARACTERISTICS
Test Conditions
Magnitude of common emitter small signal short circuit forward
current transfer ratio
V
CE
= -10 V, I
E
= -2.0 mA, f = 100 MHz
Collector-base time constant
I
E
= -2.0 mA, V
CB
= -10.0 V, f = 63.6 MHz
Collector to Base – feedback capacitance
I
E
= 0 mA, V
CB
= -10 V, 100 kHz < f < 1 MHz
Noise Figure (50 Ohms)
I
C
= -2.0 mA, V
CE
= -10 V, f = 450 MHz, R
L
= 50 Ω
Small Signal Power Gain (common emitter)
I
C
= -2.0 mA, V
CE
= -10 V, f = 450 MHz
Symbol
Value
Min.
12
Max.
36
Unit
|h
fe
|
r
b
’C
c
C
cb
NF
G
pe
1.0
8.0
0.8
3.5
ps
pF
dB
dB
17
25
T4-LDS-0313-1, Rev. 1 (10/8/13)
©2013 Microsemi Corporation
Page 3 of 4
2N4957UB
PACKAGE DIMENSIONS
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Dimensions
inch
millimeters
Min
Max
Min
Max
0.046
0.056
1.17
1.42
0.115
0.128
2.92
3.25
0.085
0.108
2.16
2.74
-
0.128
-
3.25
-
0.108
-
2.74
0.022
0.038
0.56
0.97
0.017
0.035
0.43
0.89
Note
Symbol
LS1
LS2
LW
r
r1
r2
Dimensions
inch
millimeters
Min
Max
Min
Max
0.036
0.040
0.91
1.02
0.071
0.079
1.80
2.01
0.16
0.24
0.41
0.61
-
0.008
-
0.20
-
0.012
-
0.31
-
0.022
-
0.056
Note
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0313-1, Rev. 1 (10/8/13)
©2013 Microsemi Corporation
Page 4 of 4
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