2015-12-23
Silicon PIN Photodiode
Version 1.3
SFH 213 FA
Features:
•
Wavelength range (S
10%
) 750 nm to 1100 nm
•
Short switching time (typ. 5 ns)
•
5 mm LED plastic package
Applications
High speed photointerrupters
•
•
Industrial electronics
•
For control and drive circuits
Ordering Information
Type:
Photocurrent
I
P
[µA]
V
R
= 5 V, λ = 870 nm, E
e
= 1
mW/cm
2
SFH 213 FA
90 (≥ 65)
Q62702P1671
Ordering Code
2015-12-23
1
Version 1.3
Maximum Ratings
(T
A
= 25 °C)
Parameter
Operating and storage temperature range
Reverse voltage
Reverse voltage
(t < 2 min)
Total Power dissipation
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Characteristics
(T
A
= 25 °C)
Parameter
Photocurrent
(V
R
= 5 V, λ = 870 nm, E
e
= 1 mW/cm
2
)
Wavelength of max. sensitivity
Spectral range of sensitivity
Radiant sensitive area
Dimensions of radiant sensitive area
Half angle
Dark current
(V
R
= 20 V)
Spectral sensitivity of the chip
(λ = 870 nm)
Quantum yield of the chip
(λ = 870 nm)
Open-circuit voltage
(E
e
= 0.5 mW/cm
2
, λ = 870 nm)
Short-circuit current
(E
e
= 0.5 mW/cm
2
, λ = 870 nm)
Rise and fall time
(V
R
= 20 V, R
L
= 50 Ω, λ = 850 nm)
Forward voltage
(I
F
= 100 mA, E = 0)
Capacitance
(V
R
= 0 V, f = 1 MHz, E = 0)
Temperature coefficient of V
O
(typ (min))
(typ)
(typ)
(typ)
(typ)
(typ)
Symbol
I
P
λ
S max
λ
10%
A
LxW
ϕ
Values
Symbol
T
op
; T
stg
V
R
V
R
P
tot
V
ESD
Values
-40 ... 100
20
50
150
2000
SFH 213 FA
Unit
°C
V
V
mW
V
Unit
µA
nm
nm
mm
2
mm x
mm
°
nA
A/W
Electro
ns
/Photon
mV
µA
µs
V
pF
mV / K
90 (≥ 65)
900
(typ) 750
... 1100
1.00
1x1
± 10
1 (≤ 5)
0.65
0.93
(typ (max)) I
R
(typ)
(typ)
S
λ typ
η
(typ (min))
(typ)
(typ)
(typ)
(typ)
(typ)
V
O
I
SC
t
r
, t
f
V
F
C
0
TC
V
380 (≥ 300)
42
0.005
1.3
11
-2.6
2015-12-23
2
Version 1.3
SFH 213 FA
Parameter
Temperature coefficient of I
SC
(λ = 870 nm)
Noise equivalent power
(V
R
= 20 V, λ = 870 nm)
Detection limit
(V
R
= 20 V, λ = 870 nm)
Relative Spectral Sensitivity
1)
page 8
100
S
rel
%
80
OHF01773
Symbol
(typ)
(typ)
(typ)
TC
I
NEP
D
*
Values
0.1
0.028
3.6e12
Unit
%/K
pW /
Hz
½
cm x
Hz
½
/ W
Photocurrent / Open-Circuit Voltage
1)
page 8
I
P
(V
R
= 5 V) / V
O
= f(E
e
)
60
40
20
0
400
600
800
1000 nm 1200
λ
2015-12-23
3
Version 1.3
Dark Current
1)
page 8
I
R
= f(V
R
), E = 0
OHF00394
SFH 213 FA
Power Consumption
P
tot
= f(T
A
)
160
mW
P
tot
140
120
100
80
60
40
20
0
0
20
40
60
80 ˚C 100
T
A
Capacitance
1)
page 8
C = f(V
R
), f = 1 MHz, E = 0
Dark Current
1)
page 8
I
R
= f(T
A
),
V
R
= 20 V,
E
= 0
2015-12-23
4
Version 1.3
Directional Characteristics
1)
page 8
S
rel
= f(ϕ)
SFH 213 FA
Package Outline
9.0 (0.354)
8.2 (0.323)
Area not flat
0.8 (0.031)
0.5 (0.020)
7.8 (0.307)
7.5 (0.295)
ø5.1 (0.201)
ø4.8 (0.189)
0.6 (0.024)
0.4 (0.016)
2.54 (0.100)
spacing
5.9 (0.232)
5.5 (0.217)
1.8 (0.071)
1.2 (0.047)
29 (1.142)
27 (1.063)
5.7 (0.224)
5.1 (0.201)
Chip position
0.6 (0.024)
0.4 (0.016)
Cathode (Diode)
Collector (Transistor)
GEXY6260
Dimensions in mm (inch).
Package
5mm Radial (T 1 ¾), Epoxy
2015-12-23
5
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