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FZ2400R17KE3NOSA1

Description
IGBT MODULE 1700V 2400A
CategoryDiscrete semiconductor    The transistor   
File Size398KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

FZ2400R17KE3NOSA1 Overview

IGBT MODULE 1700V 2400A

FZ2400R17KE3NOSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)3200 A
Collector-emitter maximum voltage1700 V
ConfigurationPARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)1890 ns
Nominal on time (ton)850 ns
Base Number Matches1
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ2400R17KE3
VorläufigeDaten
PreliminaryData
V
CES

1700
2400
3200
4800
12,5
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
5,2







typ.
2,00
2,40
5,8
28,0
0,8
215
7,00


0,61
0,66
0,18
0,19
1,40
1,60
0,16
0,29
390
590
680
910
max.
2,45
6,4




5,0
400

V
V
V
µC
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150

I
C nom

I
C
I
CRM
P
tot
V
GES




A

kW

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
C
= 2400 A, V
GE
= 15 V
I
C
= 2400 A, V
GE
= 15 V
I
C
= 96,0 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1700 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 2400 A, V
CE
= 900 V
V
GE
= ±15 V
R
Gon
= 0,6
I
C
= 2400 A, V
CE
= 900 V
V
GE
= ±15 V
R
Gon
= 0,6
I
C
= 2400 A, V
CE
= 900 V
V
GE
= ±15 V
R
Goff
= 0,8
I
C
= 2400 A, V
CE
= 900 V
V
GE
= ±15 V
R
Goff
= 0,8
I
C
= 2400 A, V
CE
= 900 V, L
S
= 50 nH
V
GE
= ±15 V
R
Gon
= 0,6
I
C
= 2400 A, V
CE
= 900 V, L
S
= 50 nH
V
GE
= ±15 V
R
Goff
= 0,8
V
GE
15 V, V
CC
= 1000 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
r


t
d off


t
f


E
on


E
off
I
SC
R
thJC
R
thCH
T
vj op




-40


t
P
10 µs, T
vj
= 125°C
9200

9,00

A
10,0 K/kW
K/kW
125
°C
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

preparedby:MW
approvedby:CL
dateofpublication:2013-10-02
revision:2.0
1

FZ2400R17KE3NOSA1 Related Products

FZ2400R17KE3NOSA1 FZ2400R17KE3
Description IGBT MODULE 1700V 2400A Zener Diodes DIODE ZENER 5 PCT TAPE AXIAL
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Infineon Infineon
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X7 MODULE-7
Contacts 7 7
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 3200 A 3200 A
Collector-emitter maximum voltage 1700 V 1700 V
Configuration PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code R-XUFM-X7 R-XUFM-X7
Number of components 2 2
Number of terminals 7 7
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal off time (toff) 1890 ns 1890 ns
Nominal on time (ton) 850 ns 850 ns
Base Number Matches 1 1
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