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2SC2383-Y(T6DNS,FM

Description
TRANS NPN 1A 160V TO226-3
Categorysemiconductor    Discrete semiconductor   
File Size141KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SC2383-Y(T6DNS,FM Overview

TRANS NPN 1A 160V TO226-3

2SC2383-Y(T6DNS,FM Parametric

Parameter NameAttribute value
Transistor typeNPN
Current - Collector (Ic) (Maximum)1A
Voltage - collector-emitter breakdown (maximum)160V
Vce saturation value (maximum value) when different Ib,Ic1.5V @ 50mA,500mA
Current - collector cutoff (maximum)1µA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)60 @ 200mA,5V
Power - Max900mW
Frequency - Transition100MHz
Operating temperature150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 long body
Supplier device packagingTO-92MOD
2SC2383
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
2SC2383
Color TV Vertical Deflection Output Applications
Color TV Class-B Sound Output Applications
Unit: mm
High breakdown voltage: V
CEO
= 160 V
Large continuous collector current capability
Recommended for vertical deflection output & sound output
applications for line-operated TVs.
Complementary to 2SA1013
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
160
160
6
1
0.5
900
150
−55
to 150
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21

2SC2383-Y(T6DNS,FM Related Products

2SC2383-Y(T6DNS,FM 2SC2383-O(TPE6) 2SC2383-O(TPE6,F) 2SC2383-O(T6OMI,FM 2SC2383-O,T6ALPF(M 2SC2383-Y,T6KEHF(M
Description TRANS NPN 1A 160V TO226-3 TRANSISTOR,BJT,NPN,160V V(BR)CEO,1A I(C),TO-92VAR TRANSISTOR,BJT,NPN,160V V(BR)CEO,1A I(C),TO-92VAR TRANS NPN 1A 160V TO226-3 TRANS NPN 1A 160V TO226-3 TRANS NPN 1A 160V TO226-3
Transistor type NPN - - NPN NPN NPN
Current - Collector (Ic) (Maximum) 1A - - 1A 1A 1A
Voltage - collector-emitter breakdown (maximum) 160V - - 160V 160V 160V
Vce saturation value (maximum value) when different Ib,Ic 1.5V @ 50mA,500mA - - 1.5V @ 50mA,500mA 1.5V @ 50mA,500mA 1.5V @ 50mA,500mA
Current - collector cutoff (maximum) 1µA(ICBO) - - 1µA(ICBO) 1µA(ICBO) 1µA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value) 60 @ 200mA,5V - - 60 @ 200mA,5V 60 @ 200mA,5V 60 @ 200mA,5V
Power - Max 900mW - - 900mW 900mW 900mW
Frequency - Transition 100MHz - - 100MHz 100MHz 100MHz
Operating temperature 150°C(TJ) - - 150°C(TJ) 150°C(TJ) 150°C(TJ)
Installation type Through hole - - Through hole Through hole Through hole
Package/casing TO-226-3, TO-92-3 long body - - TO-226-3, TO-92-3 long body TO-226-3, TO-92-3 long body TO-226-3, TO-92-3 long body
Supplier device packaging TO-92MOD - - TO-92MOD TO-92MOD TO-92MOD

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