TN22
Fluorescent tube lamp starter SCR
Datasheet
-
production data
Description
2, TAB
3
1
TAB
TAB
The TN22 has been specifically developed for
use in fluorescent tube lamp electronic starter
circuits.
Used in conjunction with a sensitive SCR, it
provides high energy striking characteristics with
low triggering power.
1
TO-220AB
1
2
3
2
3
IPAK
Thanks to the optimized characteristics of the
TN22, starters offer high reliability levels and
extended life time of the fluorescent tube lamps.
Features
High clamping voltage structure
(1200 to 1500 V)
Low gate triggering current for direct drive from
line (
<
1.5 mA)
High holding current (
>
175 mA), ensuring high
striking energy
January 2016
This is information on a product in full production.
DocID3768 Rev 5
1/14
www.st.com
Characteristics
TN22
1
Characteristics
Table 1. Absolute ratings (limiting values)
Symbol
V
DRM
I
T(RMS)
I
T(AV)
Parameter
Repetitive peak off-state voltage
On-state RMS current
full sine wave (180° conduction angle)
Mean on-state current
Full sinewave (180° conduction angle)
Non repetitive surge peak on-state current
(T
j
initial = 25 °C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 5 mA dI
G
/dt = 70 mA/µs
Average gate power dissipation
Peak gate power dissipation
Peak gate current
Maximum peak reverse gate voltage
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
t
p
= 20 µs
t
p
= 20 µs
T
j
= 110 °C
T
c
= 95 °C
T
c
= 95 °C
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
Value
400
2
1.8
22
A
20
2
50
300
2
1
6
-40 to +150
-40 to +110
260
A
2
s
A/µs
mW
W
A
V
°C
°C
Unit
V
A
A
I
TSM
I
2
t
dl/dt
P
G(AV)
P
GM
I
GM
V
RGM
T
stg
T
j
T
L
Table 2. Electrical characteristics (T
j
= 25 °C unless otherwise stated)
Symbol
I
GT
V
GT
I
H
dV/dt
V
BR
Test conditions
V
D
=12 V (DC), R
L
= 33
V
D
=12 V (DC), R
L
= 33
R
GK
= 1 K
V
GK
= 0 V
Linear slope up to V
D
= 67% V
DRM,
V
GK
= 0 V, T
j
= 110 °C
I
D
= 5 mA, V
GK
= 0 V
Max.
Max.
Min.
Min.
Min.
Max.
Value
1.5
3
175
500
1200
V
1500
Unit
mA
V
mA
V/µs
Table 3. Static electrical characteristics (T
j
= 25 °C unless otherwise stated)
Symbol
V
TM
I
DRM
I
TM
= 2 A
V
DRM
rated
t
p
= 380 µs
Test conditions
Max.
Max.
Value
3.1
0.1
Unit
V
mA
2/14
DocID3768 Rev 5
TN22
Table 4. Thermal resistance
Symbol
R
th(j-a)
R
th(j-c)
Junction to ambient
TO-220AB
Junction to case
Parameter
IPAK
Characteristics
Value
100
Unit
°C/W
60
3
°C/W
Figure 1. Maximum average power dissipation
versus average on-state current
(rectified sine wave)
Figure 2. Average and DC on-state current
versus case temperature
(rectified sine wave)
Figure 3. Average on-state current versus
ambient temperature, free air convection
(rectified sine wave)
Figure 4. Variation of thermal impedance
junction to ambient versus pulse duration
DocID3768 Rev 5
3/14
14
Characteristics
TN22
Figure 5. Relative variation of gate trigger and
holding current versus junction temperature
Figure 6. Surge peak on-state current versus
number of cycles
Figure 7. Non-repetitive surge peak on-state
current for sinusoidal pulse
Figure 8. On-state characteristics
(maximum values)
Figure 9. Maximum allowable RMS current
versus time conduction and initial case
temperature
Figure 10. Maximum allowable RMS current
versus time conduction and initial case
temperature
4/14
DocID3768 Rev 5
TN22
Characteristics
Figure 11. Holding current versus gate-cathode resistance (typical values)
DocID3768 Rev 5
5/14
14
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