TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TOSHIBA InGaAℓP LED
TLRE53T(F),TLRME53T(F),TLSE53T(F),TLOE53T(F),TLYE53T(F),
TLPYE53T(F),TLGE53T(F),TLFGE53T(F),TLPGE53T(F)
Panel Circuit Indicators
Unit: mm
•
•
•
•
•
•
•
•
•
Lead(Pb)-free products (lead: Sn-Ag-Cu)
3mm package
InGaAℓP technology
All plastic mold
Transparent lens
Lineup: 6 colors (red, orange, yellow, pure yellow, green and pure
green)
High intensity light emission
Excellent low current light output
Applications: message boards, security devices and dashboard
displays
Lineup
Product Name
TLRE53T(F)
TLRME53T(F)
TLSE53T(F)
TLOE53T(F)
TLYE53T(F)
TLPYE53T(F)
TLGE53T(F)
TLFGE53T(F)
TLPGE53T(F)
Color
Red
Red
Red
Orange
Yellow
Pure Yellow
Green
Green
Pure Green
Material
JEDEC
JEITA
TOSHIBA
InGaAlP
―
―
4-4E1A
Weight: 0.14 g(Typ.)
1
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
Absolute Maximum Ratings
(Ta
=
25°C)
Product Name
TLRE53T(F)
TLRME53T(F)
TLSE53T(F)
TLOE53T(F)
TLYE53T(F)
TLPYE53T(F)
TLGE53T(F)
TLFGE53T(F)
TLPGE53T(F)
Forward Current
I
F
(mA)
50
50
50
50
50
50
50
50
50
Reverse Voltage
V
R
(V)
4
4
4
4
4
4
4
4
4
Power Dissipation
P
D
(mW)
120
120
120
120
120
120
120
120
120
−
40~100
−
40~120
Operating
Temperature
T
opr
(°C)
Storage
Temperature
T
stg
(°C)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical and Optical Characteristics
(Ta
=
25°C)
Product Name
TLRE53T (F)
TLRME53T (F)
TLSE53T (F)
TLOE53T (F)
TLYE53T (F)
TLPYE53T (F)
TLGE53T (F)
TLFGE53T (F)
TLPGE53T (F)
Unit
Typ. Emission Wavelength
λ
d
λ
P
Δλ
Luminous Intensity
I
V
Min
153
272
272
272
272
153
153
85
47.6
mcd
Typ.
400
600
800
1000
800
450
400
200
130
I
F
20
20
20
20
20
20
20
20
20
mA
Forward Voltage
V
F
Typ.
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.0
2.1
V
Max
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
I
F
20
20
20
20
20
20
20
20
20
mA
Reverse Current
I
R
Max
50
50
50
50
50
50
50
50
50
μ
A
I
F
20
20
20
20
20
20
20
20
20
mA
V
R
4
4
4
4
4
4
4
4
4
V
630
626
613
605
587
580
571
565
558
(644)
(636)
(623)
(612)
(590)
(583)
(574)
(568)
(562)
nm
20
23
20
20
17
14
17
15
14
Precautions
Please be careful of the following:
•
Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 1.6 mm from the body of the device)
•
•
If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TLRE53T(F)
I
F
– V
F
100
Ta
=
25°C
50
30
3000
Ta
=
25°C
1000
I
V
– I
F
I
F
10
Luminous intensity
1.7
1.8
1.9
2.0
2.1
2.2
2.3
Forward current
I
V
(mcd)
(mA)
100
5
3
1
1.6
10
1
10
100
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
I
V
– Tc
3
1.0
Relative luminous intensity – Wavelength
IF
=
20 mA
I
V
Ta
=
25°C
Relative luminous intensity
−20
0
60
80
Relative luminous intensity
0.8
1
0.6
0.5
0.3
0.4
0.2
0.1
20
40
0
580
600
620
640
660
680
700
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
80
I
F
– Ta
(mA)
I
F
60
Ta
=
25°C
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90
°
1.0
Allowable forward current
40
20
0
0.2
0.4
0.6
0.8
0
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
3
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TLRME53T(F)
I
F
– V
F
100
Ta
=
25°C
50
30
3000
Ta
=
25°C
1000
I
V
– I
F
I
F
10
Luminous intensity
1.7
1.8
1.9
2.0
2.1
2.2
2.3
Forward current
I
V
(mcd)
(mA)
100
5
3
1
1.6
10
1
10
100
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
I
V
– Tc
10
1.0
Relative luminous intensity – Wavelength
IF
=
20 mA
I
V
5
Ta
=
25°C
Relative luminous intensity
−20
0
20
40
60
80
Relative luminous intensity
0.8
3
0.6
1
0.5
0.3
0.4
0.2
0.1
0
580
600
620
640
660
680
700
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
80
I
F
– Ta
(mA)
I
F
60
Ta
=
25°C
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90
°
1.0
Allowable forward current
40
20
0
0.2
0.4
0.6
0.8
0
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
4
2007-10-01
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
TLSE53T(F)
I
F
– V
F
100
Ta
=
25°C
50
30
10000
Ta
=
25°C
I
V
– I
F
I
V
(mcd)
Luminous intensity
1.7
1.8
1.9
2.0
2.1
2.2
2.3
(mA)
Forward current
I
F
1000
10
5
3
100
1
1.6
10
1
10
100
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
I
V
– Tc
3
1.0
Relative luminous intensity – Wavelength
IF
=
20 mA
I
V
Ta
=
25°C
Relative luminous intensity
−20
0
60
80
Relative luminous intensity
0.8
1
0.6
0.5
0.3
0.4
0.2
0.1
20
40
0
560
580
600
620
640
660
680
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
80
I
F
– Ta
(mA)
I
F
60
Ta
=
25°C
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90
°
1.0
Allowable forward current
40
20
0
0.2
0.4
0.6
0.8
0
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
5
2007-10-01
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