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LTC4441MPMSE#TRPBF

Description
IC MOSFET DRIVER N-CH 10-MSOP
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size176KB,7 Pages
ManufacturerLinear ( ADI )
Websitehttp://www.analog.com/cn/index.html
Environmental Compliance
Download Datasheet Parametric View All

LTC4441MPMSE#TRPBF Overview

IC MOSFET DRIVER N-CH 10-MSOP

LTC4441MPMSE#TRPBF Parametric

Parameter NameAttribute value
Brand NameLinear Technology
Is it Rohs certified?conform to
MakerLinear ( ADI )
Parts packaging codeMSOP
package instructionHTSSOP, TSSOP10,.19,20
Contacts10
Manufacturer packaging codeMSE
Reach Compliance Codecompliant
ECCN codeEAR99
high side driverNO
Interface integrated circuit typeBUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 codeS-PDSO-G10
JESD-609 codee3
length3 mm
Humidity sensitivity level1
Number of functions1
Number of terminals10
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Nominal output peak current6 A
Package body materialPLASTIC/EPOXY
encapsulated codeHTSSOP
Encapsulate equivalent codeTSSOP10,.19,20
Package shapeSQUARE
Package formSMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply7.5 V
Certification statusNot Qualified
Maximum seat height1.1 mm
Maximum supply voltage25 V
Minimum supply voltage5 V
Nominal supply voltage7.5 V
Supply voltage 1-max8 V
Mains voltage 1-minute5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width3 mm
QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 835
LTC4441, MOSFET DRIVER
LTC4441
DESCRIPTION
Demonstration circuit DC835 is a MOSFET driver circuit
that is designed to facilitate adding a MOSFET driver to
an existing design.
Demonstration circuit DC835 is small and allows the
MOSFET driver LTC4441 to be added to an existing de-
sign in order to evaluate the performance. The board has
a ground strip along one side that can be directly sol-
dered to source pins of an SO-8 or similar MOSFET. This
assures the MOSFET driver will be most effective due to
low connection inductance between it’s output and
MOSFET gate pin.
Demonstration circuit DC835 can be easily modified to
generate different gate drive output voltages by chang-
ing the voltage divider of the internal LDO regulator.
The DC835 has a small circuit footprint. It is a high per-
formance and cost effective solution for driving big
MOSFETs in Telecom, Automotive and Industrial applica-
tions.
Design files for this circuit board are available. Call
the LTC factory.
, LTC and LT are registered trademarks of Linear Technology Corporation.
QUICK START PROCEDURE
Demonstration circuit DC835 is easy to set up to evalu-
ate the performance of the LTC4441. For proper meas-
urement equipment setup refer to Figure 1 and follow
the procedure below:
NOTE:
When
the power dissipation may overheat the part. Please
consult the LTC4441 data sheet for details.
3.
4.
Set the Pulse Generator to 300kHz and turn the pulse
output ON.
Check for the proper output voltage of 6V and wave-
forms as shown in Figure 3.
measuring the input or output voltage wave-
forms, care must be taken to minimize the length of the
oscilloscope probe ground lead. Measure the input or
output voltage waveforms by connecting the probe tip
directly across the PWM INPUT or G1 output and GND
terminals as shown in Figure 2.
With power off, connect the input power supply to Vin
and GND.
Turn the input power source on and slowly increase
the input voltage. Be careful not to exceed 24V.
NOTE:
PROGRAMMING GATE OUTPUT VOLTAGE
Changing resistor R8 can program the output voltage at
the OUT pin of the LTC4441. Do not change the value of
resistor R2. The 330kohm value is required for stability
of the internal LDO regulator. For more information,
please refer to the LTC4441 data sheet.
1.
2.
Higher input voltage will cause higher power
dissipation in the LTC4441 LDO regulator. If very big
MOSFETs are used and switching frequency is high
1
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