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LL4151-M-18

Description
DIODE GEN PURP 50V 300MA SOD80
CategoryDiscrete semiconductor    diode   
File Size87KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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LL4151-M-18 Overview

DIODE GEN PURP 50V 300MA SOD80

LL4151-M-18 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instructionMELF-2
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time9 weeks
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
LL4151-M
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diodes
• Electrical data identical with the device 1N4151
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
• Extreme fast switches
MECHANICAL DATA
Case:
MiniMELF (SOD-80)
Weight:
approx. 31 mg
Cathode band color:
black
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/2.5 per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
LL4151-M
ORDERING CODE
LL4151-M-18 or LL4151-M-08
TYPE MARKING
-
CIRCUIT CONFIGURATION
Single
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
Average forward current
Power dissipation
V
R
= 0
t
p
= 1 μs
TEST CONDITION
SYMBOL
V
RRM
V
R
I
FSM
I
FRM
I
F
I
F(AV)
P
tot
VALUE
75
50
2
500
300
150
500
UNIT
V
V
A
mA
mA
mA
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
VALUE
500
175
-65 to +175
UNIT
K/W
°C
°C
Rev. 1.1, 14-Jul-17
Document Number: 85906
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

LL4151-M-18 Related Products

LL4151-M-18 LL4151-M-08
Description DIODE GEN PURP 50V 300MA SOD80 DIODE GEN PURP 50V 300MA SOD80
Is it Rohs certified? conform to conform to
Maker Vishay Vishay
package instruction MELF-2 O-LELF-R2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 9 weeks 9 weeks
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LELF-R2 O-LELF-R2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 175 °C 175 °C
Maximum output current 0.15 A 0.15 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.5 W 0.5 W
Guideline AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 75 V 75 V
Maximum reverse recovery time 0.004 µs 0.004 µs
surface mount YES YES
Terminal form WRAP AROUND WRAP AROUND
Terminal location END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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