BLP8G05S-200;
BLP8G05S-200G
Power LDMOS transistor
Rev. 2 — 1 October 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base stations applications at frequencies from
400 MHz to 500 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C, I
Dq
= 2 mA in an application circuit.
Test signal
CW
f
(MHz)
440
V
DS
(V)
28
P
L(AV)
(W)
210
G
p
(dB)
21
D
(%)
81
1.2 Features and benefits
High efficiency
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Easy power control
Designed for ISM operation (400 MHz to 500 MHz)
Input integration for simple board design
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
400 MHz to 500 MHz frequency range
BLP8G05S-200; BLP8G05S-200G
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
All pins must be connected for correct operation and to prevent damage to the device.
Pin
1, 2
3, 4
5
Description
gate
drain
source
[1]
Simplified outline
Graphic symbol
BLP8G05S-200 (SOT1138-2)
4
3
4
1
5
2
1
2
3
aaa-019794
BLP8G05S-200G (SOT1204-2)
1, 2
3, 4
5
gate
drain
source
[1]
4
3
4
1
5
1
2
2
3
aaa-019794
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLP8G05S-200
BLP8G05S-200G HSOP4
Description
plastic, heatsink small outline package; 4 leads
Version
SOT1138-2
SOT1204-2
HSOP4F plastic, heatsink small outline package; 4 leads (flat)
Type number
BLP8G05S-200_8G05S-200G
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 1 October 2015
2 of 12
BLP8G05S-200; BLP8G05S-200G
Power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
case
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
case temperature
junction temperature
Conditions
Min
-
0.5
65
-
[1]
Max
65
+13
+150
150
225
Unit
V
V
C
C
C
-
Continuous use at maximum temperature will affect the reliability.
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
T
case
= 80
C;
P
L
= 200 W
Typ
0.5
Unit
K/W
R
th(j-case)
thermal resistance from junction to case
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C per section; unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 320 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 11.2 A
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
52
-
20
0.08
Max
-
2.3
2.8
-
280
-
-
Unit
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 3.2 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 11.2 A
Table 7.
RF characteristics
Test signal: CW at 440 MHz; RF performance at V
DS
= 28 V; I
Dq
= 2 mA; T
case
= 25
C; unless
otherwise specified; in a class-AB production test circuit.
Symbol
G
p
RL
in
D
Parameter
power gain
input return loss
drain efficiency
Conditions
P
L
= 210 W
P
L
= 210 W
P
L
= 210 W
Min
19.5
-
73
Typ
21
15
77
Max
-
11
-
Unit
dB
dB
%
BLP8G05S-200_8G05S-200G
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 1 October 2015
3 of 12
BLP8G05S-200; BLP8G05S-200G
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLP8G05S-200 and BLP8G05S-200G are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 20 mA; P
L
= 200 W (CW); f = 440 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data. Typical values unless otherwise specified. I
Dq
= 20 mA; V
DS
= 28 V.
Z
S
and Z
L
defined in
Figure 1.
f
(MHz)
440
Z
S
()
1.5 + j0.7
Z
L
()
1.1 + j0.14
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLP8G05S-200_8G05S-200G
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 1 October 2015
4 of 12
BLP8G05S-200; BLP8G05S-200G
Power LDMOS transistor
7.3 Test circuit
150.4 mm
130 mm
C3
C4
R1
C10
L1
L2
C9
C11
C6
C1
C12
C2
C5
C7
C8
aaa-008975
Printed-Circuit Board (PCB): Rogers RO4350B;
r
= 3.5; thickness = 0.762 mm.
See
Table 9
for list of components.
Fig 2.
Component layout for test circuit
Table 9.
List of components
For test circuit, see
Figure 2.
Component
C1, C3
C2
C4, C9
C5, C6
C7
C8, C10
C11
C12
R1
L1
L2
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
chip resistor
copper wire
copper foil
Value
160 pF
39 pF
910 pF
33 pF
15 pF
130 pF
220
F,
63 V
4.3 pF
10
6 turns
-
ATC800A
Philips: SMD 1206
Remarks
ATC800A
ATC800A
ATC800B
ATC800B
ATC800B
ATC800B
BLP8G05S-200_8G05S-200G
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 1 October 2015
5 of 12
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
