1N8149US – 1N8182US
Voidless-Hermetically-Sealed Unidirectional 150 W
Low-Capacitance Transient Voltage Suppressors
DESCRIPTION
This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor
(TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where
a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from
the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak
“standoff” voltage selection from 6.8 to 170 volts with 150 watt ratings. They are very robust in hard-
glass construction and also use an internal metallurgical bond identified as Category 1 for high reliability
applications. These devices are also available in axial leaded packages for thru-hole mounting.
Available
“A” SQ-MELF
Package
Also available in:
“A” Package
(axial-leaded)
1N8149 – 1N8182
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
High surge current and peak pulse power unidirectional protection for sensitive circuits.
Very low capacitance for high frequency or high baud rate applications.
Bidirectional capability with two devices in anti-parallel (see Figure 5).
Triple-layer passivation.
Internal “Category
1”
metallurgical bonds.
Voidless hermetically sealed glass package.
RoHS compliant versions are available.
APPLICATIONS / BENEFITS
High reliability transient protection.
Extremely robust construction.
Working peak “standoff” voltage (V
WM
) from 6.8 to 170 volts.
Available as 150 W peak pulse power (P
PP
) at 10/1000 µs.
Lowest available capacitance for 150 W rated TVS.
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
Secondary lightning protection per select levels in IEC61000-4-5.
Square-end-cap terminals for easy placement.
Nonsensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi
MicroNote 050.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Capacitance at zero volts
Thermal Resistance junction to ambient
o
Peak Pulse Power at 25
C (10µs/1000µs)
Impulse repetition rate (duty factor)
o
Steady State (Average) Power @ T
A
= 25 C
Solder Temperature (10 s maximum)
Symbol
T
J
and T
STG
C
R
θJA
P
PP
d.f
P
M(AV)
Value
-55 to +175
4
150
150
0.01
1.0
260
Unit
C
pF
o
C/W
W
%
W
o
C
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Note:
Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where T
J(MAX)
is not exceeded.
T4-LDS-xxxx, Rev x (10-02-14)
©2013 Microsemi Corporation
Page 1 of 6
1N8149US – 1N8182US
MECHANICAL and PACKAGING
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
TERMINALS: End caps feature tin/lead or RoHS compliant matte/tin plating over copper.
MARKING: None
POLARITY: Cathode band
MOUNTING: Any position
TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities.
WEIGHT: Approximately 539 milligrams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
MQ
Reliability Level
MQ (reference JAN)
MX (reference JANTX)
MV (reference JANTXV)
MS (reference JANS)
Blank = Commercial
Type number
(see
Electrical Characteristics
table)
1N8149
US (e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
MELF Surface Mount
Symbol
V(BR)
V
(BR)
V
WM
I
D
I
(BR)
I
PP
V
C
P
PP
C
T
V
WIB
I
IB
SYMBOLS & DEFINITIONS
Definition
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
Standby Current: The current through the device at rated stand-off voltage.
Breakdown Current: The current used for measuring Breakdown Voltage V
(BR)
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
Total Capacitance: The total small signal capacitance between the diode terminals of a complete device.
Inverse Blocking Voltage: The maximum-rated value of dc or peak blocking voltage in the inverse direction.
Blocking Leakage Current: The current through the device at the rated inverse blocking voltage (V
WIB
).
T4-LDS-xxxx, Rev x (10-02-14)
©2013 Microsemi Corporation
Page 2 of 6
1N8149US – 1N8182US
ELECTRICAL CHARACTERISTICS @
T
A
= 25
o
C unless otherwise noted.
Type
Number
Minimum
Breakdown
Voltage
(V
(BR)
)
V
7.79
8.65
9.50
10.4
11.4
12.4
13.8
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
104.0
114.0
124.0
138.0
152.0
171.0
190.0
Breakdown
Current
(I
(BR)
)
mA
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Working
Standoff
Voltage
(V
WM
)
V
6.8
7.5
8.5
9.0
10.0
11.0
12.0
13.0
15.0
17.0
18.0
20.0
22.0
25.0
28.0
30.0
33.0
36.0
40.0
43.0
47.0
53.0
58.0
64.0
70.0
75.0
82.0
94.0
100.0
110.0
120.0
130.0
150.0
170.0
Maximum
Standby
Current
(I
D
)
A
20
10
10
5
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1N8149
1N8150
1N8151
1N8152
1N8153
1N8154
1N8155
1N8156
1N8157
1N8158
1N8159
1N8160
1N8161
1N8162
1N8163
1N8164
1N8165
1N8166
1N8167
1N8168
1N8169
1N8170
1N8171
1N8172
1N8173
1N8174
1N8175
1N8176
1N8177
1N8178
1N8179
1N8180
1N8181
1N8182
Maximum
Peak
Clamping
Voltage
(V
C
)
V
12.8
13.5
14.5
15.6
16.9
18.2
20.2
22.3
25.1
27.7
30.5
33.3
37.4
41.6
45.7
49.9
53.6
59.1
64.6
70.1
77.0
85.3
93.7
103.0
113.0
125.0
137.0
152.0
168.0
183.0
208.0
225.0
261.0
294.0
Maximum
Surge
Current
(I
PP
)
A
11.7
11.1
10.3
9.62
8.88
8.24
7.42
6.73
5.98
5.42
4.92
4.50
4.01
3.60
3.28
3.01
2.80
2.54
2.32
2.14
1.95
1.76
1.60
1.45
1.32
1.20
1.09
0.98
0.89
0.82
0.72
0.67
0.57
0.51
Maximum
V
(BR)
Temperature
Coefficient
(α
V(BR)
)
%/ºC
.065
.068
.073
.075
.078
.081
.084
.086
.088
.090
.092
.094
.096
.097
.098
.099
.100
.101
.101
.102
.103
.104
.104
.105
.105
.105
.106
.107
.107
.107
.108
.108
.108
.108
Capacitance
(C
T
)
pF
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
Inverse
Blocking
Voltage
(V
WIB
)
V
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
Blocking
Leakage
Current
(I
IB
)
A
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
T4-LDS-xxxx, Rev x (10-02-14)
©2013 Microsemi Corporation
Page 3 of 6
1N8149US – 1N8182US
GRAPHS
PEAK PULSE POWER (
P
PP
) kW
PULSE TIME (tp) ms to 50% decay point in Figure 2
FIGURE 1
PEAK PULSE POWER VS. PULSE TIME
I
PP
– Peak Pulse Current - % I
PP
t – Time – ms
FIGURE 2
10/1000
s
CURRENT IMPULSE WAVEFORM
T4-LDS-xxxx, Rev x (10-02-14)
©2013 Microsemi Corporation
Page 4 of 6
1N8149US – 1N8182US
GRAPHS
Peak Pulse Power (P
PP
) or current I
PP
o
(surge) in percent of 25 C rating
PULSE CONDITIONS
DEFINED IN FIGURES 1 & 2
T
A
Ambient Temperature C
FIGURE 3
DERATING CURVE
o
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration described in this data sheet is shown in Figure 4 involving a TVS and a unique
diode in series and opposite direction. For bidirectional low capacitance TVS applications, use two (2) low capacitance TVS
devices as described in this data sheet in anti-parallel as shown in Figure 5. This will result in twice the capacitance of Figure 4
specified in this data sheet.
Cathode>
>
FIGURE 4
Low Capacitance TVS
FIGURE 5
Bidirectional configuration
(2 Low Capacitance TVS
devices in anti-parallel)
T4-LDS-xxxx, Rev x (10-02-14)
©2013 Microsemi Corporation
Page 5 of 6
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