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APT100GLQ65JU2

Description
POWER MODULE - IGBT
Categorysemiconductor    Discrete semiconductor   
File Size391KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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APT100GLQ65JU2 Overview

POWER MODULE - IGBT

APT100GLQ65JU2 Parametric

Parameter NameAttribute value
IGBT typeTrench type field cutoff
Configurationboost chopper
Voltage - collector-emitter breakdown (maximum)650V
Current - Collector (Ic) (Maximum)165A
Power - Max430W
Vce(on) when different Vge,Ic2.3V @ 15V,100A
Current - collector cutoff (maximum)50µA
Input capacitance (Cies) at different Vce6.1nF @ 25V
enterstandard
NTC thermistornone
Operating temperature-55°C ~ 175°C(TJ)
Installation typeBase installation
Package/casingSOT-227-4,miniBLOC
Supplier device packagingISOTOP®
APT100GLQ65JU2
ISOTOP
®
Boost chopper
High speed Trench + Field Stop IGBT4
Power Module
V
CES
= 650V
I
C
= 100A* @ Tc = 80°C
K
C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
High speed Trench + Field Stop IGBT 4
- Low voltage drop
- Low leakage current
- Low switching losses
ISOTOP
®
Package (SOT-227)
Very low stray inductance
G
E
E
G
C
K
Benefits
Low conduction losses
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
C
of V
CEsat
RoHS Compliant
ISOTOP
®
All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
Parameter
Collector - Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Power Dissipation
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
Max ratings
650
165*
100*
270
±20
430
Unit
V
A
V
W
APT100GLQ65JU2 – Rev 0 August, 2016
* Specification of IGBT device but output current must be limited due to size of output pins.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
www.microsemi.com
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