1F6 datasheet, PDF - EEWORLD Datasheet

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1F6: Description1 A, 800 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size156KB，2 Pages; ManufacturerGood-Ark; Websitehttp://www.goodark.com/

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1F6 Overview

1 A, 800 V, SILICON, SIGNAL DIODE

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1F1 THRU 1F7

FAST SWITCHING PLASTIC RECTIFIER

Reverse Voltage -

50 to 1000 Volts

Forward Current -

1.0 Ampere

Features

High current capability.

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0 utilizing

Flame retardant epoxy molding compound.

1.0 ampere operation at T

=55 with no thermal runaway

Fast switching for high efficiency

Low leakage

Mechanical Data

Case:

Molded plastic, R-1

Terminals:

Plated axial leads, solderable per

MIL-STD-202, method 208

Polarity:

Color band denotes cathode

Mounting Position:

Any

Weight:

0.007 ounce, 0.20 gram

DIM ENSIONS

DIM

inches

Min.

0.114

0.095

0.020

1.000

Max.

0.138

0.099

0.024

Min.

2.9

2.42

0.5

25.40

Max.

3.5

2.51

0.6

Note

Maximum Ratings and Electrical Characteristics

Ratings at 25 ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Symbols

1F1

1F2

1F3

1F4

1F5

1F6

1F7

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5mm) lead length at T

=55

Peak forward surge current

8.3mS single half sine-wave superimposed

on rated load (MIL-STD-750D 4066 method)

Maximum forward voltage at 1.0A DC

Maximum DC reverse current

at rated DC blocking voltage

=25

=100

RRM

RMS

(AV)

FSM

100

200

140

200

400

280

400

1.0

30.0

1.30

5.0

150.0

600

420

600

800

560

800

1000

700

1000

Volts

Amp

Amps

Volts

Maximum reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

Typical thermal resistance (Note 3)

Operating and storage temperature range

150

10.0

67.0

-55 to +150

250

500

, T

STG

Notes:

(1) Reverse recovery test conditions: I

=0.5A, I

=1.0A, I

=0.25A

(2) Measured at 1.0MHz and applied reverse voltage of 4.0 VDC

(3) Thermal resistance from junction to ambient and from junction to lead 0.375 (9.5mm) lead length, P.C.B. mounted with 0.22X0.22 (5.5X5.5mm) copper pads

1F6 Related Products

	1F6	1F1	1F2	1F4	1F5	1F3
Description	1 A, 800 V, SILICON, SIGNAL DIODE	MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT, PLUG	MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT, PLUG	MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT	1 A, 600 V, SILICON, SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE

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