1H1 datasheet, PDF - EEWORLD Datasheet

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1H1: Description1 A, 50 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size35KB，2 Pages; ManufacturerFORMOSA; Websitehttp://www.formosams.com/

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1H1 Overview

1 A, 50 V, SILICON, SIGNAL DIODE

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1H1

1.0 AMP HIGH EFFICIENCY RECTIFIERS

THRU

1H8

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

FEATURES

* Low forward voltage drop

* High current capability

* High reliability

* High surge current capability

* High speed switching

1.0 Ampere

R-1

.102(2.6)

.091(2.3)

DIA.

.787(20.0)

MIN.

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-0 rate flame retardant

* Lead: Axial leads, solderable per MIL-STD-202,

method 208 guranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

* Weight: 0.19 grams

.126(3.2)

.106(2.7)

.025(0.65)

.021(0.55)

DIA.

.787(20.0)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=25 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range T

, T

STG

NOTES:

1H1

1H2

100

1H3

200

140

200

1H4

300

210

300

1.0

1.3

5.0

1H5

400

280

400

1H6

600

420

600

1H7

800

560

800

1H8 UNITS

1000

700

1000

1.0

1.85

150

-65 +150

1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

1H1 Related Products

	1H1	1H2	1H4	1H3	1H5	1H6	1H7	1H8
Description	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE	1 A, 800 V, SILICON, SIGNAL DIODE	1 A, 1000 V, SILICON, SIGNAL DIODE

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