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1N5462C

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 30V, Silicon, Abrupt,
CategoryDiscrete semiconductor    diode   
File Size60KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

1N5462C Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 30V, Silicon, Abrupt,

1N5462C Parametric

Parameter NameAttribute value
package instructionO-LALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH Q
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio2.8
Nominal diode capacitance8.2 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor600
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2e-8 µA
Reverse test voltage25 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
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