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HERF1607G C0G

Description
DIODE ARRAY GP 800V ITO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size388KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

HERF1607G C0G Overview

DIODE ARRAY GP 800V ITO-220AB

HERF1607G C0G Parametric

Parameter NameAttribute value
Diode configuration1 pair of common cathodes
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)800V
Current - average rectification (Io) (per diode)16A
Voltage at different If - Forward (Vf1.7V @ 8A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)80ns
Current at different Vr - Reverse leakage current10µA @ 800V
Operating Temperature - Junction-55°C ~ 150°C
Installation typeThrough hole
Package/casingTO-220-3 fully encapsulated, isolation tab
Supplier device packagingITO-220AB
HERF1601G - HERF1608G
Taiwan Semiconductor
CREAT BY ART
16A, 50V - 1000V Isolated Glass Passivated High Efficient Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
ITO-220AB
MECHANICAL DATA
Case:
ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.82 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
HERF HERF HERF HERF HERF HERF HERF HERF
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
@8A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
(Note 1)
T
J
=25°C
T
J
=125°C
SYMBOL 1601
G
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
50
80
1.5
- 55 to +150
- 55 to +150
1.0
10
400
80
50
50
35
50
1602
G
100
70
100
1603
G
200
140
200
1604
G
300
210
300
16
125
1.3
1.7
1605
G
400
280
400
1606
G
600
420
600
1607
G
800
560
800
1608
G
1000
700
1000
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
UNIT
Version: H1511

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