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SFS1003G MNG

Description
DIODE GEN PURP 150V 10A TO263AB
Categorysemiconductor    Discrete semiconductor   
File Size368KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SFS1003G MNG Overview

DIODE GEN PURP 150V 10A TO263AB

SFS1003G MNG Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)150V
Current - average rectification (Io)10A
Voltage at different If - Forward (Vf975mV @ 5A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)35ns
Current at different Vr - Reverse leakage current1µA @ 150V
Capacitance at different Vr, F70pF @ 4V,1MHz
Installation typesurface mount
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
Supplier device packagingTO-263AB(D²PAK)
Operating Temperature - Junction-55°C ~ 150°C
SFS1001G - SFS1008G
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 600V Surface Mount Super Fast Rectifiers
FEATURES
- Low forward voltage drop
- Ideal for automated placement
- High current capability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-263AB (D PAK)
MECHANICAL DATA
Case:
TO-263AB (D
2
PAK)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Weight:
1.37 g (approximately)
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
SFS
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 5 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
70
2
- 55 to +150
- 55 to +150
0.975
1
200
35
50
G
50
35
50
SFS
G
100
70
100
SFS
G
150
105
150
SFS
G
200
140
200
10
125
1.3
1.7
SFS
G
300
210
300
SFS
G
400
280
400
SFS
G
500
350
500
SFS
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
G
600
420
600
1001 1002 1003 1004 1005 1006 1007 1008
Document Number: DS_D1405076
Version: H15
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