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HERAF1008G C0G

Description
DIODE GEN PURP 10A ITO220AC
Categorysemiconductor    Discrete semiconductor   
File Size377KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

HERAF1008G C0G Overview

DIODE GEN PURP 10A ITO220AC

HERAF1008G C0G Parametric

Parameter NameAttribute value
Diode typestandard
Current - average rectification (Io)10A
Voltage at different If - Forward (Vf1.7V @ 10A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)80ns
Current at different Vr - Reverse leakage current10µA @ 1000V
Capacitance at different Vr, F60pF @ 4V,1MHz
Installation typeThrough hole
Package/casingTO-220-2 whole package
Supplier device packagingITO-220AC
Operating Temperature - Junction-55°C ~ 150°C
HERAF1001G - HERAF1008G
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 1000V Isolated Glass Passivated High Efficient Rectifiers
FEATURES
- Glass passivated chip junction
- High efficiency, Low VF
- High surge current capability
- High current capability
- High reliability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
1
2
ITO-220AC
MECHANICAL DATA
Case:
ITO-220AC
Molding compound: UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 10 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
50
80
2
- 55 to +150
- 55 to +150
1.0
10
400
80
60
HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G
50
35
50
100
70
100
200
140
200
300
210
300
10
150
1.3
1.7
400
280
400
600
420
600
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Version: H1511

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