Silicon Avalanche Diodes
1000W Surface Mount Transient Voltage Suppressor
RoHS
1KSMBJ Series
®
The 1KSMBJ range of surface mount protectors utilizes the
proven glass passivated technology used in many Littelfuse
product portfolios. Rated at 1000 watts (10 x 1000 µs double
exponential waveform), the 1KSMBJ bridges the gap left by
traditional types rated at 600 watts and 1500 watts, suiting
many applications where both power handling and size are
paramount. The extremely fast turn-on time (less than one pico
second), coupled with the low clamping factor and low on-state
impedance, make this range ideal for the protection of today’s
circuits. Our specially selected range of voltages has been
chosen to fulfill optimum protection for use in automotive and
telecom applications.
FEATURES
•
RoHS Compliant
•
Available in breakdown voltages from 6.8v. to 160v;
specially designed for automotive applications
•
Response time: 1x10-12
.
secs (theoretical)
•
Glass passivated junction
•
Offers high-surge rating in compact package: bridges the
Mechanical Specifications:
Weight:
Case:
Terminals:
Solderable Leads:
Marking:
Standard Packaging:
0.093 grammes (approx)
DO-214AA Outline moulded plastic over
glass passivated junction. UL 94 V-0 rated
Solderable to MIL-STD-750 Method 2026
23°C for 10 seconds
Cathode band, device code logo
Supplied on reels of 3000 pieces. Tape
width 12mm. Follows requirements of
EIA 481-1
gap between 600W and 1.5KW
•
Forward surge rating:
100A 8.3ms single half sine wave
•
100% tested
•
Operating temperature: -55°C to +150°C
Agency Approvals:
Recognized under the Components Program
of Underwriters Laboratories.
Agnecy File Numbers:
E128662
ORDERING INFORMATION
SMBJ
C A
Voltage
Bi-Directional
5% Voltage Tolerance
Tape and reeled (3000 pcs)
270
w w w. l i t t e l f u s e . c o m
Silicon Avalanche Diodes
1000W Surface Mount Transient Voltage Suppressor
RoHS
1KSMBJ Series
Device
Code
Reverse
Stand Off
Voltage
V
R
(Volts)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
Breakdown
Voltage
V
BR
(Volts) @
I
T
MIN
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.80
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
MAX
7.46
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
IT (mA)
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Reverse
Leakage
I
R
@ V
R
(µA)
1000.0 (4)
1000.0 (4)
500.0 (4)
500.0 (4)
200.0 (4)
200.0 (4)
50.0 (4)
50.0 (4)
10.0 (4)
10.0 (4)
5.0 (4)
5.0 (4)
5.0 (4)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum
Clamping
Voltage
V
C
@
I
PP
(Volts)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
Maximum
Peak Pulse
Current
®
ELECTRICAL SPECIFICATION @ Tamb 25°C
Part
Number
I
PP
(A)
92.5
95.0
85.0
88.3
80.0
83.3
73.3
75.0
66.7
68.3
61.7
63.3
58.3
60.0
53.3
55.0
45.0
46.7
43.3
45.0
38.0
40.0
35.0
36.7
31.7
33.3
28.3
30.0
25.5
26.7
22.9
24.0
21.0
22.0
19.2
20.0
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
6.8
6.8A
7.5
7.5A
8.2
8.2A
9.1
9.1A
10
10A
11
11A
12
12A
13
13A
15
15A
16
16A
18
18A
20
20A
22
22A
24
24A
27
27A
30
30A
33
33A
36
36A
N10A
N10B
N10C
N10D
N10E
N10F
N10G
N10H
N10I
N10J
N10K
N10L
N10M
N10N
N10O
N10P
N10Q
N10R
N10S
N10T
N10U
N10V
N10W
N10X
N10Y
N10Z
O10A
O10B
O10C
O10D
O10E
O10F
O10G
O10H
O10I
O10J
6
SILICON DIODE
ARRAYS
271
Notes:
1.
All testing is performed at Tamb = 25˚C (+/- 3˚C)
2.
Bv is measured using a pulse of 20 milliseconds or less
3.
Ir is doubled for Bi-directional devices only with VR equal or less than 10 volts
4.
Peak Pulse Current is quoted @ 10/1000
µsec
5.
All parameters are stated as tested on a FET Tester Model 3400
6.
Devices are uni-directional. Vf is not specified.
w w w. l i t t e l f u s e . c o m
Silicon Avalanche Diodes
1000W Surface Mount Transient Voltage Suppressor
RoHS
1KSMBJ Series
Device
Code
Reverse
Stand Off
Voltage
V
R
(Volts)
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102.0
105.0
111.0
121.0
128.0
130.0
136.0
Breakdown
Voltage
V
BR
(Volts) @
I
T
MIN
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105.0
108.0
114.0
117.0
124.0
135.0
143.0
144.0
152.0
MAX
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100.0
95.5
110.0
105.0
121.0
116.0
132.0
126.0
143.0
137.0
165.0
158.0
176.0
168.0
IT (mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Reverse
Leakage
I
R
@ V
R
(µA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum
Clamping
Voltage
V
C
@
I
PP
(Volts)
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108.0
103.0
118.0
113.0
131.0
125.0
144.0
137.0
158.0
152.0
173.0
165.0
187.0
179.0
215.0
207.0
230.0
219.0
Maximum
Peak Pulse
Current
®
ELECTRICAL SPECIFICATION @ Tamb 25°C
Part
Number
I
PP
(A)
17.5
18.7
16.0
16.8
14.8
15.5
13.7
14.3
12.3
13.0
11.3
11.8
10.2
10.8
9.2
9.7
8.5
8.8
7.5
8.0
7.0
7.3
6.3
6.6
5.8
6.1
5.3
5.6
4.7
4.8
4.3
4.6
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
1KSMBJ
39
39A
43
43A
47
47A
51
51A
56
56A
62
62A
68
68A
75
75A
82
82A
91
91A
100
100A
110
110A
120
120A
130
130A
150
150A
160
160A
O10K
O10L
O10M
O10N
O10O
O10P
O10Q
O10R
O10S
O10T
O10U
O10V
O10W
O10X
O10Y
O10Z
P10A
P10B
P10C
P10D
P10E
P10F
P10G
P10H
P10I
P10J
P10K
P10L
P10M
P10N
P10O
P10P
Notes:
1. All testing is performed at Tamb = 25˚C (+/- 3˚C)
2. Bv is measured using a pulse of 20 milliseconds or less
3. Ir is doubled for Bi-directional devices only with VR equal or less than 10 volts
4. Peak Pulse Current is quoted @ 10/1000
µsec
5. All parameters are stated as tested on a FET Tester Model 3400
6. Vf, for uni-directional devices, is measured using a 300 microsecond square wave pulse @ IT = 50A
272
w w w. l i t t e l f u s e . c o m
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