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SFF1004GA C0G

Description
DIODE GEN PURP 200V 10A ITO220AB
Categorysemiconductor    Discrete semiconductor   
File Size391KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SFF1004GA C0G Overview

DIODE GEN PURP 200V 10A ITO220AB

SFF1004GA C0G Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)200V
Current - average rectification (Io)10A
Voltage at different If - Forward (Vf975mV @ 5A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)35ns
Current at different Vr - Reverse leakage current10µA @ 200V
Capacitance at different Vr, F70pF @ 4V,1MHz
Installation typeThrough hole
Package/casingTO-220-3 fully encapsulated, isolation tab
Supplier device packagingITO-220AB
Operating Temperature - Junction-55°C ~ 150°C
SFF1001GA - SFF1008GA
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 600V Isolated Glass Passivated Super Fast Rectifiers
FEATURES
- High efficiency, low VF.
- High current capability
- High reliability
- High surge current capability
- Low power loss.
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
ITO-220AB
MECHANICAL DATA
Case:
ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max. (5 in-lbs. max.)
Weight:
1.8 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
SFF
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 5A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V DC.
T
J
=25°C
T
J
=125°C
GA
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
70
8
- 55 to +150
- 55 to +150
0.975
10
400
35
50
50
35
50
SFF
GA
100
70
100
SFF
GA
150
105
150
SFF
GA
200
140
200
10
125
1.3
1.7
SFF
GA
300
210
300
SFF
GA
400
280
400
SFF
GA
500
350
500
SFF
GA
600
420
600
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
SYMBOL 1001 1002 1003 1004 1005 1006 1007 1008 UNIT
Document Number: DS_D0000132
Version: D15

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