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1MB10-120

Description
Fuji Discrete Package IGBT
File Size184KB,4 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
Download Datasheet View All

1MB10-120 Overview

Fuji Discrete Package IGBT

Fuji Discrete Package IGBT
n
Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Minimized Internal Stray Inductance
n
Outline Drawing
n
Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n
Maximum Ratings and Characteristics
Absolute Maximum Ratings
( T
c
=25°C
)
Items
Symbols
Collector-Emitter Voltage
V
CES
Gate -Emitter Voltage
V
GES
DC T
c
= 25°C
I
C 25
Collector Current
DC T
c
=100°C
I
C 100
1ms T
c
= 25°C
I
C PULSE
IGBT Max. Power Dissipation
P
C
Operating Temperature
T
j
Storage Temperature
T
stg
Mounting Screw Torque
n
Equivalent Circuit
Ratings
1200
±
20
16
10
48
135
+150
-40
+150
50
Units
V
V
A
W
°C
°C
Nm
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
( at T
j
=25°C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
t
ON
t
r
t
OFF
t
f
Test Conditions
V
GE
=0V V
CE
=1200V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=10mA
V
GE
=15V I
C
=10A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=10A
V
GE
=±15V
R
G
=160Ω
V
CC
=600V
I
C
=10A
V
GE
=+15V
R
G
=16Ω
Min.
Typ.
Max.
1.0
20
8.5
3.5
Units
mA
µA
V
pF
1.2
0.6
1.5
0.5
0.16
0.11
0.30
0.5
5.5
1200
250
80
Turn-on Time
Switching Time
Turn-off Time
Turn-on Time
Turn-off Time
µs
µs
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
Test Conditions
Min.
Typ.
Max.
0.92
Units
°C/W
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