Fuji Discrete Package IGBT
n
Features
•
Square RBSOA
•
Low Saturation Voltage
•
Less Total Power Dissipation
•
Minimized Internal Stray Inductance
n
Outline Drawing
n
Applications
•
High Power Switching
•
A.C. Motor Controls
•
D.C. Motor Controls
•
Uninterruptible Power Supply
n
Maximum Ratings and Characteristics
•
Absolute Maximum Ratings
( T
c
=25°C
)
Items
Symbols
Collector-Emitter Voltage
V
CES
Gate -Emitter Voltage
V
GES
DC T
c
= 25°C
I
C 25
Collector Current
DC T
c
=100°C
I
C 100
1ms T
c
= 25°C
I
C PULSE
IGBT Max. Power Dissipation
P
C
FWD Max. Power Dissipation
P
C
Operating Temperature
T
j
Storage Temperature
T
stg
Mounting Screw Torque
n
Equivalent Circuit
Ratings
600
±
20
33
15
132
120
60
+150
-40
∼
+150
50
Units
V
V
A
W
W
°C
°C
Nm
•
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
( at T
j
=25°C )
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=600V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=15mA
V
GE
=15V I
C
=15A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=300V
I
C
=15A
V
GE
=±15V
R
G
=160Ω
V
CC
=300V
I
C
=15A
V
GE
=+15V
R
G
=16Ω
I
F
=15A V
GE
=0V
I
F
=15A
,
V
GE
=-10V, di/dt=100A/µs
Min.
Typ.
Max.
1.0
20
8.5
3.0
Units
mA
µA
V
pF
1.2
0.6
1.0
0.35
0.16
0.11
0.30
0.35
3.0
300
5.5
1000
200
40
Turn-on Time
Switching Time
Turn-off Time
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
µs
µs
V
ns
•
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
Test Conditions
IGBT
Diode
Min.
Typ.
Max.
1.04
2.08
Units
°C/W
Collector Current vs. Collector-Emitter Voltage
60
T
j
= 2 5 ° C
60
V
GE
= 2 0 V
Collector Current vs. Collector-Emitter Voltage
T
j
= 1 2 5 ° C
50
15V
V
GE
= 2 0 V
50
[A]
[A]
40
12V
30
40
C
Collector Current : I
Collector Current : I
C
15V
30
12V
20
20
10V
10
8V
0
10
10V
8V
0
0
1
2
3
4
5
6
Collector-Emitter Voltage : V
CE
[V]
0
1
2
3
4
5
6
Collector-Emitter Voltage : V
CE
[V]
Collector-Emitter Voltage vs. Gate-Emitter Voltage
12
T
j
= 2 5 ° C
12
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T
j
= 1 2 5 ° C
[V]
10
[V]
CE
10
CE
Collector-Emitter Voltage : V
6
Collector-Emitter Voltage : V
8
8
6
4
I
C
=
2
30A
15A
7.5A
0
0
5
10
15
20
25
4
I
C
=
30A
15A
7.5A
2
0
0
5
10
15
20
25
Gate-Emitter Voltage : V
GE
[V]
Gate-Emitter Voltage : V
GE
[V]
Switching Time vs. Collector Current
V
CC
= 3 0 0 V , R
G
= 1 6
Ω
, V
GE
= ± 1 5 V , T
j
= 2 5 ° C
1000
1000
Switching Time vs. Collector Current
V
CC
= 3 0 0 V , R
G
= 1 6
Ω
, V
GE
= ± 1 5 V , T
j
= 1 2 5 ° C
t
off
, t
r
, t
off
, t
f
[nsec]
, t
r
, t
off
, t
f
[nsec]
t
f
t
off
100
t
on
t
f
t
on
100
Switching Time : t
on
Switching Time : t
on
t
r
t
r
10
0
5
10
15
20
25
30
10
0
5
10
15
20
25
30
Collector Current : I
C
[A]
Collector Current : I
C
[A]
Switching Time vs. R
G
V
CC
=300V, I
C
= 1 5 A , V
GE
= ± 1 5 V , T
j
= 2 5 ° C
Switching Time vs. R
G
V
CC
=300V, I
C
= 1 5 A , V
GE
= ± 1 5 V , T
j
= 1 2 5 ° C
, t
r
, t
off
, t
f
[nsec]
, t
r
, t
off
, t
f
[nsec]
1000
t
on
t
off
t
r
t
f
100
1000
t
off
t
on
t
f
t
r
on
Switching Time : t
Switching Time : t
on
100
10
0
100
Gate Resistance : R
G
[
Ω
]
10
0
100
Gate Resistance : R
G
[
Ω
]
Capacitance vs. Collector-Emitter Voltage
T
j
= 2 5 ° C
500
Dynamic Input Characteristics
T
j
= 2 5 ° C
25
, C
res
, C
ies
[pF]
[V]
1000
CE
Collector-Emitter Voltage : V
300
15
Capacitance : C
C
oes
100
200
10
C
res
100
5
10
0
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
G a t e C h a r g e : Q
G
[nQ]
80
0
90
Reverse Recovery Time vs. Forward Current
V
R
= 2 0 0 V ,
-di
Reverse Recovery Current vs. Forward Current
V
R
= 2 0 0 V ,
-di
200
/
dt
= 1 0 0 A / µ s e c
8
/
dt
= 1 0 0 A / µ s e c
[nsec]
[A]
150
125°C
6
rr
Reverse Recovery Time : t
100
25°C
50
Reverse Recovery Current : I
rr
125°C
4
25°C
2
0
0
5
10
15
20
25
30
0
0
5
10
15
20
25
30
Forward Current : I
F
[A]
Forward Current : I
F
[A]
Gate-Emitter Voltage : V
oes
GE
[V]
C
ies
400
V
C C
=200V, 300V, 400V
20
Reverse Biased Safe Operating Area
+ V
GE
= 1 5 V , - V
GE
< 15V, T
j
<125°C, R
G
>1 6
Ω
35
250
Typical Short Circuit Capability
V
CC
= 4 0 0 V , R
G
= 1 6
Ω
, T
j
= 1 2 5 ° C
100
30
200
[A]
[A]
SC
25
C
Short Circuit Current : I
15
100
40
10
50
20
5
0
0
100
200
300
400
500
600
700
0
5
10
15
20
[V]
Gate Voltage : V
GE
Collector-Emitter Voltage : V
CE
[V]
0
25
Reverse Recovery Characteristics vs.
Forward Voltage vs. Forward Current
60
T
j
= 1 2 5 ° C 2 5 ° C
200
I
F
= 1 5 A , T
j
= 1 2 5 ° C
-di
/
dt
20
[nsec]
50
150
15
[A]
30
I
rr
100
10
20
50
10
t
rr
5
0
0,0
0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0
100
200
-di
300
/
dt
400
500
0
600
Forward Voltage : V
F
[V]
[A/µsec]
Transient Thermal Resistance
Thermal Resistance : Rth(j-c) [°C/W]
10
1
FWD
0
10
IGBT
10
-1
10
-4
10
-2
10
-3
10
-2
10
-1
10
0
Pulse Width : P
W
[sec]
Reverse Recovery Current : I
40
Reverse Recovery Time : t
Forward Current : I
F
rr
rr
[A]
Short Circuit Time : t
Collector Current : I
20
150
60
SC
t
SC
[µs]
I
SC
80
Switching losses
(E
on
, E
off
vs. I
C
)
I
C
[A]
Test Circuit
Switching waveforms
P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com
Analogue and Mixed Signal
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